公开(公告)号：US12154919B2

公开(公告)日：2024-11-26

申请号：US17326103

申请日：2021-05-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146 ,  H01L29/06 ,  H01L29/78 ,  H01L29/10

Abstract: Transistors having nonplanar electron channels in the channel width plane have one or more features that cause the different parts of the nonplanar electron channel to turn on at substantially the same threshold voltage. Advantageously, such transistors have substantially uniform threshold voltage across the nonplanar electron channel. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.

公开(公告)号：US11860383B2

公开(公告)日：2024-01-02

申请号：US17392023

申请日：2021-08-02

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Qin Wang ,  Chao Niu

IPC: H04N25/61 ,  G02B3/00 ,  H04N25/70

CPC classification number: G02B3/0043 ,  H04N25/61 ,  H04N25/70

Abstract: Embodiments disclosed herein reduce petal flare. A flare-suppressing image sensor includes a plurality of pixels including a first set of pixels and a second set of pixels. The flare-suppressing image sensor further includes plurality of microlenses, where each microlens is aligned to a respective one of the first set of pixels. The flare-suppressing image sensor further includes plurality of sub-microlens, where each microlens array is aligned to a respective one of the second set of pixels.

公开(公告)号：US20230307474A1

公开(公告)日：2023-09-28

申请号：US17700858

申请日：2022-03-22

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146

CPC classification number: H01L27/14614 ,  H01L27/14643 ,  H01L27/14689

Abstract: Transistors, electronic devices, and methods are provided. Transistors include a gate trench formed in a semiconductor substrate and extending to a gate trench depth, and a source and a drain formed as doped regions in the semiconductor substrate and having a first conductive type. The source and the drain are formed along a channel length direction of the transistor at a first end and a second end of the gate trench, respectively, and the source and the drain each includes a first doped region and a second doped region extending away from the first doped region. The second doped region extends to a depth in the semiconductor substrate deeper than the first doped region relative to a surface of the semiconductor substrate.

公开(公告)号：US11658198B2

公开(公告)日：2023-05-23

申请号：US16998783

申请日：2020-08-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Qin Wang ,  Gang Chen

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/14603 ,  H01L27/14609

Abstract: A device includes a photodiode, a floating diffusion region, a transfer gate, and a channel region. The photodiode is disposed in a semiconductor material. The photodiode is coupled to generate charge in response to incident light. The floating diffusion region is disposed in the semiconductor material. The transfer gate is disposed between the photodiode and the floating diffusion region. The channel region associated with the transfer gate is in the semiconductor material proximate to the transfer gate. The transfer gate is coupled to transfer the charge from the photodiode to the floating diffusion region through the channel region in response to a transfer signal coupled to be received by the transfer gate. The transfer gate includes a plurality of fin structures that extend into the semiconductor material and the photodiode.

公开(公告)号：US20220376068A1

公开(公告)日：2022-11-24

申请号：US17326095

申请日：2021-05-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L27/146

Abstract: Transistors include a pyramid-shaped gate trench defined by a triangular shape or a trapezoidal shape in a channel width plane and a trapezoidal shape in a channel length plane. Side wall portions of the pyramid-shaped gate trench form a channel having a triangular shape or a trapezoidal shape in the channel width plane. Advantageously, such transistors increase transconductance without increasing pixel width. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.

公开(公告)号：US20220375977A1

公开(公告)日：2022-11-24

申请号：US17326103

申请日：2021-05-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146

Abstract: Transistors having nonplanar electron channels in the channel width plane have one or more features that cause the different parts of the nonplanar electron channel to turn on at substantially the same threshold voltage. Advantageously, such transistors have substantially uniform threshold voltage across the nonplanar electron channel. Devices, image sensors, and pixels incorporating such transistors are also provided, in addition to methods of manufacturing the same.

公开(公告)号：US11282886B2

公开(公告)日：2022-03-22

申请号：US16711239

申请日：2019-12-11

Applicant: OmniVision Technologies, Inc.

Inventor： Hui Zang ,  Gang Chen

IPC: H01L27/146

Abstract: A pixel includes a semiconductor substrate, an upper surface thereof forming a trench having a trench depth relative to a planar region of the upper surface surrounding the trench, and in a plane perpendicular to the planar region; an upper width between the planar region and an upper depth that is less than the trench depth; and a lower width, between the upper depth and the trench depth, that is less than the upper width. A floating diffusion region adjacent to the trench extends away from the planar region to a junction depth exceeding the upper depth and is less than the trench depth. The photodiode region in the substrate includes a lower photodiode section beneath the trench and an upper photodiode section adjacent to the trench, beginning at a photodiode depth that is less than the trench depth, extending toward and adjoining the lower photodiode section.

公开(公告)号：US20220020790A1

公开(公告)日：2022-01-20

申请号：US16931229

申请日：2020-07-16

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Hui Zang ,  Cunyu Yang ,  Gang Chen

IPC: H01L27/146 ,  H04N5/33

Abstract: A pixel cell includes a photodiode disposed in a pixel cell region and proximate to a front side of a semiconductor layer to generate image charge in response to incident light directed through a backside to the photodiode. A cell deep trench isolation (CDTI) structure is disposed in the pixel cell region along an optical path of the incident light to the photodiode and proximate to the backside. The CDTI structure includes a central portion extending a first depth from the backside towards the front side. Planar outer portions extend laterally outward from the central portion. The planar output portions further extend a second depth from the backside towards the front side. The first depth is greater than the second depth. Planes formed by each of the planar outer portions intersect in a line coincident with a longitudinal center line of the central portion of the CDTI structure.

公开(公告)号：US10964738B2

公开(公告)日：2021-03-30

申请号：US16149544

申请日：2018-10-02

Applicant: OmniVision Technologies, Inc.

Inventor： Gang Chen ,  Yuanwei Zheng ,  Qin Wang ,  Cunyu Yang ,  Guannan Chen ,  Duli Mao ,  Dyson Tai ,  Lindsay Grant ,  Eric Webster ,  Sing-Chung Hu

IPC: H01L27/146 ,  H04N5/378 ,  H04N9/04

Abstract: An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.

公开(公告)号：US10734434B2

公开(公告)日：2020-08-04

申请号：US15984136

申请日：2018-05-18

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Gang Chen ,  Duli Mao ,  Dyson Tai ,  Lindsay Grant

IPC: H01L27/146 ,  H04N5/359 ,  H04N5/378

Abstract: An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.