公开(公告)号：US20250133968A1

公开(公告)日：2025-04-24

申请号：US18921034

申请日：2024-10-21

Applicant: National Applied Research Laboratories

Inventor： Ya-Jui Tsou ,  Duan-Lee Tang ,  Yuan-Chen Sun ,  Kai-Shin Li ,  Ya-Ling Wu ,  Jia-Min Shieh

IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/80

Abstract: The present invention provides a spin-orbit torque magnetoresistive memory structure, which comprises a first conductive layer, a magnetic tunneling junction (MTJ) layer, a channel layer, and a second conductive layer stacked sequentially. The MTJ layer is disposed on the first conductive layer. The channel layer is disposed on the MTJ layer. The second conductive layer is disposed on the channel layer. These structures are fabricated sequentially using lithography. By forming the MTJ layer before the channel layer, redeposition of the metal of the channel layer on the MTJ layer can be avoided.