公开(公告)号：US20170170089A1

公开(公告)日：2017-06-15

申请号：US15356519

申请日：2016-11-18

Applicant: NXP B.V.

Inventor： Johannes Josephus Theodorus Marinus Donkers ,  Godefridus Adrianus Maria Hurkx ,  Jeroen Antoon Croon ,  Mark Andrzej Gajda ,  Jan Sonsky

IPC: H01L23/31 ,  H01L29/205 ,  H01L21/56 ,  H01L29/872 ,  H01L23/29 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L23/3171 ,  H01L21/56 ,  H01L23/291 ,  H01L23/3192 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7787 ,  H01L29/872

Abstract: A semiconductor device and a method of making the same are disclosed. The device includes a substrate including an AlGaN layer located on a GaN layer for forming a two dimensional electron gas at an interface between the AlGaN layer and the GaN layer. The device also includes a plurality of electrical contacts located on a major surface of the substrate. The device further includes a plurality of passivation layers located on the major surface of the substrate. The plurality of passivation layers includes a first passivation layer of a first passivation material contacting a first area of the major surface and a second passivation layer of a second passivation material contacting a second area of the major surface. The first and second passivation materials are different passivation materials. The different passivation materials may be compositions of silicon nitride that include different proportions of silicon