公开(公告)号：US20240357341A1

公开(公告)日：2024-10-24

申请号：US18603398

申请日：2024-03-13

Applicant: MEDIATEK INC.

Inventor： Kun-Lin WU ,  Wei-Yu CHEN

IPC: H04W8/20 ,  H04W8/22 ,  H04W72/0446 ,  H04W72/0453

CPC classification number: H04W8/20 ,  H04W8/22 ,  H04W72/0446 ,  H04W72/0453

Abstract: An electronic device is provided. The electronic device includes a first subscriber identity module (SIM), a second SIM, and a processor. The processor is configured to merge a first signal from the first SIM and a second signal from the second SIM and transmit the first signal and the second signal through a radio frequency front end (RFFE) transmission path concurrently, in response to a determination that the first signal and the second signal are intra-band signals and the first SIM and the second SIM share one RFFE transmission path.

公开(公告)号：US20240297120A1

公开(公告)日：2024-09-05

申请号：US18407783

申请日：2024-01-09

Applicant: MEDIATEK INC.

Inventor： Wei-Yu CHEN ,  Yi-Lin TSAI ,  Nai-Wei LIU ,  Shih-Chin LIN ,  Wen-Sung HSU

IPC: H01L23/538 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L25/10 ,  H01L25/16

CPC classification number: H01L23/5381 ,  H01L23/3135 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L25/105 ,  H01L25/16 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/19011 ,  H01L2924/19106

Abstract: A semiconductor package structure includes a first redistribution layer, a first semiconductor die, a second semiconductor die, a bridge structure, and a plurality of conductive bumps. The first semiconductor die and the second semiconductor die are disposed over the first redistribution layer. The bridge structure is disposed under the first redistribution layer. The first semiconductor die is electrically coupled to the second semiconductor die through the first redistribution layer and the bridge structure. The conductive bumps are disposed under the first redistribution layer and are coupled to the first redistribution layer. The bridge structure is disposed between at least two of the conductive bumps.