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    ELECTROSTATIC DISCHARGE STRUCTURE FOR ENHANCING ROBUSTNESS OF CHARGE DEVICE MODEL AND CHIP WITH THE SAME
    1.
    发明申请
    ELECTROSTATIC DISCHARGE STRUCTURE FOR ENHANCING ROBUSTNESS OF CHARGE DEVICE MODEL AND CHIP WITH THE SAME 审中-公开
    用于增强充电装置模型和芯片稳定性的静电放电结构

    公开(公告)号：US20140362482A1

    公开(公告)日：2014-12-11

    申请号：US13911645

    申请日：2013-06-06

    Applicant: MediaTek Inc.

    Inventor： Bo-Shih HUANG ,  Tzung-Han WU ,  Chi-Yao YU

    IPC: H02H9/04

    CPC classification number: H02H9/046

    Abstract: An ESD (Electrostatic discharge) structure for enhancing robustness of CDM (Charge Device Model) at least includes an input stage. The input stage includes an input pad, a first ESD clamp circuit, a second ESD clamp circuit, a resistor, and a transistor. The input pad is configured to receive an input signal. The first ESD clamp circuit is coupled between the input pad and a work voltage. The second ESD clamp circuit is coupled between the input pad and a ground voltage. The first clamp circuit and the second clamp circuit are capable of bypassing an electrostatic current. The transistor has a first source/drain, a second source/drain, a gate coupled to the input pad, and a bulk coupled through the resistor to the work voltage or the ground voltage.

    Abstract translation: 用于增强CDM（充电装置型号）的鲁棒性的ESD（静电放电）结构至少包括输入级。 输入级包括输入焊盘，第一ESD钳位电路，第二ESD钳位电路，电阻器和晶体管。 输入焊盘被配置为接收输入信号。 第一ESD钳位电路耦合在输入焊盘和工作电压之间。 第二ESD钳位电路耦合在输入焊盘和接地电压之间。 第一钳位电路和第二钳位电路能够绕过静电电流。 晶体管具有第一源极/漏极，第二源极/漏极，耦合到输入焊盘的栅极和通过电阻器耦合到工作电压或接地电压的体积。

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