公开(公告)号：US11922988B2

公开(公告)日：2024-03-05

申请号：US17674301

申请日：2022-02-17

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yang-Kyu Choi ,  Myung-Su Kim

IPC: G11C11/24 ,  G11C11/404 ,  G11C11/4096

CPC classification number: G11C11/404 ,  G11C11/4096

Abstract: Disclosed are a DRAM device capable of storing charges for a long time and an operating method thereof. According to an embodiment, a DRAM device includes a channel region formed on a substrate, a gate insulating film region formed on the channel region, a floating gate region formed on the gate insulating film region, a transition layer region formed on the floating gate region, and a control gate region formed on the transition layer region and generating a potential difference with the floating gate region in response to a fact that a potential that is not less than a reference potential is applied and releasing at least one charge stored in the floating gate region or storing the at least one charge into the floating gate region, by generating a transition current due to the potential difference.

公开(公告)号：US11869950B2

公开(公告)日：2024-01-09

申请号：US17437368

申请日：2021-07-29

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yang-Kyu Choi ,  Myung-Su Kim

IPC: G11C11/34 ,  H01L29/423 ,  H01L21/28 ,  G11C16/10 ,  H01L29/66 ,  H01L29/788

CPC classification number: H01L29/42324 ,  G11C16/10 ,  H01L29/40114 ,  H01L29/66825 ,  H01L29/7881

Abstract: A steep-slope field-effect transistor and a fabrication method thereof are disclosed. The steep-slope field-effect transistor according to an embodiment of the inventive concept includes a source, a channel region, and a drain formed on a substrate; a gate insulating film formed on an upper portion of the channel region; a floating gate formed on an upper portion of the gate insulating film; a transition layer formed on an upper portion of the floating gate; and a control gate formed on an upper portion of the transition layer. The steep-slope field-effect transistor applies a reference potential or more to the control gate to discharge or bring in at least one charge stored in the floating gate.

公开(公告)号：US20220223705A1

公开(公告)日：2022-07-14

申请号：US17437368

申请日：2021-07-29

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yang-Kyu Choi ,  Myung-Su Kim

IPC: H01L29/423 ,  G11C16/10 ,  H01L29/788 ,  H01L21/28 ,  H01L29/66

Abstract: A steep-slope field-effect transistor and a fabrication method thereof are disclosed. The steep-slope field-effect transistor according to an embodiment of the inventive concept includes a source, a channel region, and a drain formed on a substrate; a gate insulating film formed on an upper portion of the channel region; a floating gate formed on an upper portion of the gate insulating film; a transition layer formed on an upper portion of the floating gate; and a control gate formed on an upper portion of the transition layer. The steep-slope field-effect transistor applies a reference potential or more to the control gate to discharge or bring in at least one charge stored in the floating gate.