公开(公告)号：US20210097380A1

公开(公告)日：2021-04-01

申请号：US17037444

申请日：2020-09-29

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Yang-Kyu CHOI ,  Joon-Kyu HAN ,  Gyeong Jun YUN

IPC: G06N3/063 ,  H01L29/78 ,  H01L29/792 ,  H01L27/1157

Abstract: The present invention relates to a single transistor implementing a neuromorphic system capable of performing neuron and synaptic operations through the single transistor including a floating body layer and a charge storage layer and being implemented by a neuron device and a synaptic device which are co-integrated on the same plane, and the neuromorphic system using the same, and forms the single transistor including a hole barrier material layer formed on a substrate and including a hole barrier material or an electron barrier material, the floating body layer formed on the hole barrier material layer, a source and a drain formed on opposite sides of the floating body layer, a gate insulating layer formed on the floating body layer and including an oxide layer and the charge storage layer, and a gate formed on the gate insulating layer.