公开(公告)号：US12287568B2

公开(公告)日：2025-04-29

申请号：US17698404

申请日：2022-03-18

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun Kim ,  Seul Gi Kim ,  Hyun Mi Kim ,  Jin Woo Cho ,  Hye Young Kim

IPC: G03F1/62 ,  C01B32/184 ,  G03F7/00 ,  H01L21/02 ,  H01L21/324 ,  H01L29/16

Abstract: This application relates to a pellicle for extreme ultraviolet lithography and a manufacturing method thereof using the low-temperature direct growth method of multilayer graphene. In one aspect, the method includes forming an etch stopper on a substrate, forming a seed layer on the etch stopper, the seed layer including at least one of amorphous boron, BN, BCN, B4C, or Me-X (Me is at least one of Si, Ti, Mo, or Zr, and X is at least one of B, C, or N). The method may also include forming a metal catalyst layer on the seed layer; forming an amorphous carbon layer on the metal catalyst layer, and directly growing multilayer graphene on the seed layer through interlayer exchange between the metal catalyst layer and the amorphous carbon layer by performing a low-temperature heat treatment at 450° C. to 600° C.

公开(公告)号：US12248243B2

公开(公告)日：2025-03-11

申请号：US17454377

申请日：2021-11-10

Applicant: KOREA ELECTRONICS TECHNOLOGY INSTITUTE

Inventor： Hyeong Keun Kim ,  Seul Gi Kim ,  Hyun Mi Kim ,  Hye Young Kim

IPC: G03F1/64 ,  C01B32/182 ,  G03F7/00

Abstract: This application relates to a method for direct growth of multilayer graphene used as a core layer of a pellicle for extreme ultraviolet lithography. This application also relates to a method for manufacturing the pellicle for extreme ultraviolet lithography by using the multilayer graphene direct growth method. The multilayer graphene direct growth method may include forming few-layer graphene on a silicon nitride substrate, forming a metal catalyst layer on the few-layer graphene, and forming an amorphous carbon layer on the metal catalyst layer. The method may also include directly growing multilayer graphene from the few-layer graphene used as a seed layer by interlayer exchange between the metal catalyst layer and the amorphous carbon layer through heat treatment.