公开(公告)号：US20240258445A1

公开(公告)日：2024-08-01

申请号：US18034591

申请日：2020-10-30

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung-Yool Choi ,  Hyeok Jun Jin ,  Khang June Lee

IPC: H01L31/032 ,  H01L31/109 ,  H01L31/18

CPC classification number: H01L31/032 ,  H01L31/109 ,  H01L31/18

Abstract: The present invention relates to an optical sensor using ferroelectrics, including a substrate; a first type semiconductor stacked on the substrate; and a second type semiconductor in contact with the first type semiconductor to form a heterojunction structure, wherein at least one of the first type semiconductor or the second type semiconductor is ferroelectrics.

公开(公告)号：US11552267B2

公开(公告)日：2023-01-10

申请号：US16941891

申请日：2020-07-29

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung-Yool Choi ,  Byung Chul Jang ,  Jun Hwe Cha

IPC: H01L51/10 ,  H01L27/28 ,  H01L51/00 ,  G06N3/063 ,  H01L51/05

Abstract: The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.

公开(公告)号：US20210143349A1

公开(公告)日：2021-05-13

申请号：US16941891

申请日：2020-07-29

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung-Yool Choi ,  Byung Chul Jang ,  Jun Hwe Cha

IPC: H01L51/10 ,  H01L27/28 ,  H01L51/00 ,  H01L51/05 ,  G06N3/063

Abstract: The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.

公开(公告)号：US11793006B2

公开(公告)日：2023-10-17

申请号：US17394276

申请日：2021-08-04

Applicant: SK hynix Inc. ,  Korea Advanced Institute of Science and Technology

Inventor： Sangsu Park ,  Sung-Yool Choi ,  Sung Gap Im ,  Sang Yoon Yang ,  Jungyeop Oh

IPC: H01L51/50 ,  H10K10/50 ,  G06N3/065 ,  H10K10/82 ,  H10K19/00 ,  H10K71/10 ,  H10K85/10

CPC classification number: H10K10/50 ,  G06N3/065 ,  H10K10/82 ,  H10K19/202 ,  H10K71/10 ,  H10K85/111 ,  H10K85/151

Abstract: Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

公开(公告)号：US11268210B2

公开(公告)日：2022-03-08

申请号：US16925674

申请日：2020-07-10

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung-Yool Choi ,  Woonggi Hong ,  Gi Woong Shim

IPC: C30B25/02 ,  C30B31/18 ,  C23C16/30 ,  C30B29/46

Abstract: The present disclosure provides a method for preparing a transition metal chalcogenide including: a step of forming a transition metal chalcogenide thin film; and a step of controlling the defects of the transition metal chalcogenide thin film by injecting a processing gas including oxygen and nitrogen to the formed transition metal chalcogenide thin film.

公开(公告)号：US20220010456A1

公开(公告)日：2022-01-13

申请号：US16925674

申请日：2020-07-10

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung-Yool Choi ,  Woonggi Hong ,  Gi Woong Shim

IPC: C30B31/18 ,  C30B29/46 ,  C30B25/02 ,  C23C16/30

Abstract: The present disclosure provides a method for preparing a transition metal chalcogenide including: a step of forming a transition metal chalcogenide thin film; and a step of controlling the defects of the transition metal chalcogenide thin film by injecting a processing gas including oxygen and nitrogen to the formed transition metal chalcogenide thin film.

公开(公告)号：US11024759B2

公开(公告)日：2021-06-01

申请号：US16226950

申请日：2018-12-20

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung-Yool Choi ,  Gwang Hyuk Shin

IPC: H01L31/0336 ,  H01L31/10 ,  H01L29/24 ,  H01L29/778

Abstract: Provided is an electronic device containing: a two-dimensional semiconductor material; and another heterogeneous material adjacent to the two-dimensional semiconductor material, wherein the heterogeneous material is doped with an impurity of a type different from the two-dimensional semiconductor material or has a band gap different from the two-dimensional semiconductor material.