公开(公告)号：US11268210B2

公开(公告)日：2022-03-08

申请号：US16925674

申请日：2020-07-10

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung-Yool Choi ,  Woonggi Hong ,  Gi Woong Shim

IPC: C30B25/02 ,  C30B31/18 ,  C23C16/30 ,  C30B29/46

Abstract: The present disclosure provides a method for preparing a transition metal chalcogenide including: a step of forming a transition metal chalcogenide thin film; and a step of controlling the defects of the transition metal chalcogenide thin film by injecting a processing gas including oxygen and nitrogen to the formed transition metal chalcogenide thin film.

公开(公告)号：US20220010456A1

公开(公告)日：2022-01-13

申请号：US16925674

申请日：2020-07-10

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sung-Yool Choi ,  Woonggi Hong ,  Gi Woong Shim

IPC: C30B31/18 ,  C30B29/46 ,  C30B25/02 ,  C23C16/30

Abstract: The present disclosure provides a method for preparing a transition metal chalcogenide including: a step of forming a transition metal chalcogenide thin film; and a step of controlling the defects of the transition metal chalcogenide thin film by injecting a processing gas including oxygen and nitrogen to the formed transition metal chalcogenide thin film.