公开(公告)号：US11422095B2

公开(公告)日：2022-08-23

申请号：US16286315

申请日：2019-02-26

Applicant: KLA-Tencor Corporation

Inventor： Phillip Atkins ,  Liequan Lee ,  Shankar Krishnan ,  David C. S. Wu ,  Emily Chiu

IPC: G01N21/956 ,  G01N21/25 ,  G01N21/47 ,  G03F7/20 ,  G01N21/95

Abstract: A metrology system may receive a model for measuring one or more selected attributes of a target including features distributed in a selected pattern based on regression of spectroscopic scatterometry data from a scatterometry tool for a range of wavelengths. The metrology system may further generate a weighting function for the model to de-emphasize portions of the spectroscopic scatterometry data associated with wavelengths at which light captured by the scatterometry tool when measuring the target is predicted to include undesired diffraction orders. The metrology system may further direct the spectroscopic scatterometry tool to generate scatterometry data of one or more measurement targets including fabricated features distributed in the selected pattern. The metrology system may further measure the selected attributes for the one or more measurement targets based on regression of the scatterometry data of the one or more measurement targets to the model weighted by the weighting function.

公开(公告)号：US20200232909A1

公开(公告)日：2020-07-23

申请号：US16286315

申请日：2019-02-26

Applicant: KLA-Tencor Corporation

Inventor： Phillip Atkins ,  Liequan Lee ,  Shankar Krishnan ,  David C.S. Wu ,  Emily Chiu

IPC: G01N21/25 ,  G01N21/47

Abstract: A metrology system may receive a model for measuring one or more selected attributes of a target including features distributed in a selected pattern based on regression of spectroscopic scatterometry data from a scatterometry tool for a range of wavelengths. The metrology system may further generate a weighting function for the model to de-emphasize portions of the spectroscopic scatterometry data associated with wavelengths at which light captured by the scatterometry tool when measuring the target is predicted to include undesired diffraction orders. The metrology system may further direct the spectroscopic scatterometry tool to generate scatterometry data of one or more measurement targets including fabricated features distributed in the selected pattern. The metrology system may further measure the selected attributes for the one or more measurement targets based on regression of the scatterometry data of the one or more measurement targets to the model weighted by the weighting function.

公开(公告)号：US11156548B2

公开(公告)日：2021-10-26

申请号：US15938270

申请日：2018-03-28

Applicant: KLA-TENCOR CORPORATION

Inventor： Manh Nguyen ,  Phillip Atkins ,  Alexander Kuznetsov ,  Liequan Lee ,  Natalia Malkova ,  Paul Aoyagi ,  Mikhail Sushchik ,  Dawei Hu ,  Houssam Chouaib

IPC: G01N21/21 ,  G01B11/06 ,  G03F7/20 ,  G05B13/02

Abstract: A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.

公开(公告)号：US20190178788A1

公开(公告)日：2019-06-13

申请号：US15938270

申请日：2018-03-28

Applicant: KLA-TENCOR CORPORATION

Inventor： Manh Nguyen ,  Phillip Atkins ,  Alexander Kuznetsov ,  Liequan Lee ,  Natalia Malkova ,  Paul Aoyagi ,  Mikhail Sushchik ,  Dawei Hu ,  Houssam Chouaib

IPC: G01N21/21 ,  G01B11/06 ,  G05B13/02 ,  G03F7/20

Abstract: A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.