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1.发明申请PHOTOEMISSION MONITORING OF EUV MIRROR AND MASK SURFACE CONTAMINATION IN ACTINIC EUV SYSTEMS 有权欧盟反光镜系统的EUV镜像和掩膜表面污染的照片监测公开(公告)号：US20130313442A1
公开(公告)日：2013-11-28
申请号：US13898705
申请日：2013-05-21
Inventor： Li Wang , Daimian Wang , Yanwei Liu , Alan Michael Aindow
IPC: G01N21/956 , G01N21/94
CPC classification number: G01N21/956 , G01N21/94 , G01N23/2273 , G01N2223/611 , G01N2223/652 , G03F1/86 , G06T7/0004 , H01L31/02168
Abstract: Photoelectron emission mapping systems for use with EUV (extreme ultraviolet) mask inspection and lithography systems are described. The mapping systems may be used to provide photoelectron emission maps for EUV photolithography masks and/or EUV mirrors. The systems use EUV photoelectron sources used for mask inspection or photolithography to impinge EUV light on the masks and/or mirrors. The EUV light generates photoelectron on the surfaces of the mask and/or mirrors and the photoelectrons are collected and analyzed by detectors placed away from optical spaces of the EUV chamber.
Abstract translation: 描述了用于EUV（极紫外）掩模检查和光刻系统的光电子发射测绘系统。 映射系统可用于为EUV光刻掩模和/或EUV反射镜提供光电子发射图。 该系统使用用于掩模检查或光刻的EUV光电子源将EUV光照射在掩模和/或反射镜上。 EUV光在掩模和/或反射镜的表面上产生光电子，并且通过放置在远离EUV室的光学空间的检测器收集和分析光电子。
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2.发明授权Photoemission monitoring of EUV mirror and mask surface contamination in actinic EUV systems 有权光化学EUV系统中EUV镜面和掩模表面污染的光电监测公开(公告)号：US09453801B2
公开(公告)日：2016-09-27
申请号：US13898705
申请日：2013-05-21
Applicant: KLA-Tencor Corporation
Inventor： Li Wang , Daimian Wang , Yanwei Liu , Alan Michael Aindow
IPC: G01N21/956 , G01N21/94 , G03F1/86 , H01L31/0216 , G06T7/00 , G01N23/227
CPC classification number: G01N21/956 , G01N21/94 , G01N23/2273 , G01N2223/611 , G01N2223/652 , G03F1/86 , G06T7/0004 , H01L31/02168
Abstract: Photoelectron emission mapping systems for use with EUV (extreme ultraviolet) mask inspection and lithography systems are described. The mapping systems may be used to provide photoelectron emission maps for EUV photolithography masks and/or EUV mirrors. The systems use EUV photoelectron sources used for mask inspection or photolithography to impinge EUV light on the masks and/or mirrors. The EUV light generates photoelectron on the surfaces of the mask and/or mirrors and the photoelectrons are collected and analyzed by detectors placed away from optical spaces of the EUV chamber.
Abstract translation: 描述了用于EUV（极紫外）掩模检查和光刻系统的光电子发射测绘系统。 映射系统可用于为EUV光刻掩模和/或EUV反射镜提供光电子发射图。 该系统使用用于掩模检查或光刻的EUV光电子源将EUV光照射在掩模和/或反射镜上。 EUV光在掩模和/或反射镜的表面上产生光电子，并且通过放置在远离EUV室的光学空间的检测器收集和分析光电子。
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