公开(公告)号：US11579099B2

公开(公告)日：2023-02-14

申请号：US17037115

申请日：2020-09-29

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Chun-Ting Liu ,  Wen-Li Wu ,  Bo-Ching He ,  Guo-Dung Chen ,  Sheng-Hsun Wu ,  Wei-En Fu

IPC: G01N23/20 ,  G01N23/20008 ,  G01N23/2206 ,  G01N23/223 ,  G01N23/2273

Abstract: This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes.

公开(公告)号：US12188883B2

公开(公告)日：2025-01-07

申请号：US17994858

申请日：2022-11-28

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Bo-Ching He ,  Chun-Ting Liu ,  Wei-En Fu ,  Wen-Li Wu

IPC: G01N23/20008 ,  G01B15/04

Abstract: This disclosure relates to an X-ray reflectometry apparatus and a method for measuring a three-dimensional nanostructure on a flat substrate. The X-ray reflectometry apparatus comprises an X-ray source, an X-ray reflector, a 2-dimensional X-ray detector, and a two-axis moving device. The X-ray source is for emitting X-ray. The X-ray reflector is configured for reflecting the X-ray onto a sample surface. The 2-dimensional X-ray detector is configured to collect a reflecting X-ray signal from the sample surface. The two-axis moving device is configured to control two-axis directions of the 2-dimensional X-ray detector to move on at least one of x-axis and z-axis with a formula concerning an incident angle of the X-ray with respect to the sample surface for collecting the reflecting X-ray signal.

公开(公告)号：US10352694B2

公开(公告)日：2019-07-16

申请号：US15652212

申请日：2017-07-17

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Guo-Dung Chen ,  Bo-Ching He ,  Wei-En Fu

IPC: G01B15/00 ,  G01N23/02 ,  G03F7/20

Abstract: A contactless dual-plane positioning method is disclosed. In this method, an X ray is provided. The X ray passes through a first test piece along a light incident axis. A scattering pattern generated by the X ray passing through the first test piece, and a scatting light intensity corresponding to the scattering pattern are obtained. According to the scattering light intensity, the first test piece is pivoted along a first axis or a second axis until the scattering intensity is greater than or equal to a predetermined intensity. At least three measurement distances between a second test piece and the first test piece are then obtained. According to the measurement distances, an included angle between the second test piece and the light incident axis is adjusted by pivoting the second test piece along a third axis or a fourth axis until the differences between any two measurement distances are less than a predetermined threshold value.

公开(公告)号：US11867595B2

公开(公告)日：2024-01-09

申请号：US17532767

申请日：2021-11-22

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Chun-Ting Liu ,  Wen-Li Wu ,  Bo-Ching He ,  Guo-Dung Chen ,  Sheng-Hsun Wu ,  Wei-En Fu

IPC: G01N23/20 ,  G01N23/20008

CPC classification number: G01N23/20 ,  G01N23/20008 ,  G01N2223/051 ,  G01N2223/052 ,  G01N2223/1003 ,  G01N2223/1016 ,  G01N2223/315 ,  G01N2223/611

Abstract: This disclosure relates to an apparatus and methods for applying X-ray reflectometry (XRR) in characterizing three dimensional nanostructures supported on a flat substrate with a miniscule sampling area and a thickness in nanometers. In particular, this disclosure is targeted for addressing the difficulties encountered when XRR is applied to samples with intricate nanostructures along all three directions, e.g. arrays of nanostructured poles or shafts. Convergent X-ray with long wavelength, greater than that from a copper anode of 0.154 nm and less than twice of the characteristic dimensions along the film thickness direction, is preferably used with appropriate collimations on both incident and detection arms to enable the XRR for measurements of samples with limited sample area and scattering volumes. In one embodiment, the incident angle of the long-wavelength focused X-ray is ≥24°, and the sample area is ≤25 μm×25 μm.

公开(公告)号：US11287253B2

公开(公告)日：2022-03-29

申请号：US16730236

申请日：2019-12-30

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Chun-Ting Liu ,  Han-Yu Chang ,  Bo-Ching He ,  Guo-Dung Chen ,  Wen-Li Wu ,  Wei-En Fu

IPC: G01B15/02 ,  G01N23/223 ,  G01N23/2252

Abstract: The present disclosure relates to a device and a method for measuring a thickness of an ultrathin film on a solid substrate. The thickness of the target ultrathin film is measured from the intensity of the fluorescence converted by the substrate and leaking and tunneling through the target ultrathin film at low detection angle. The fluorescence generated from the substrate has sufficient and stable high intensity, and therefore can provide fluorescence signal strong enough to make the measurement performed rapidly and precisely. The detection angle is small, and therefore the noise ratio is low, and efficiency of thickness measurement according to the method disclosed herein is high. The thickness measurement method can be applied into In-line product measurement without using standard sample, and therefore the thickness of the product can be measured rapidly and efficiently.