EUV LIGHT GENERATOR
    1.
    发明申请
    EUV LIGHT GENERATOR 审中-公开

    公开(公告)号:US20190394868A1

    公开(公告)日:2019-12-26

    申请号:US16560611

    申请日:2019-09-04

    Abstract: An EUV light generator including the following components: A. an electron storage ring including a first linear section and a second linear section; B. an electron supplier configured to supply the electron storage ring with an electron bunch; C. a high-frequency acceleration cavity disposed in the first linear section and configured to accelerate the electron bunch in such a way that a length Lez of the electron bunch satisfies “0.09 m≤Lez≤3 m;” and D. an undulator disposed in the second linear section and configured to output EUV light when the electron bunch enters the undulator.

    TARGET SUPPLY DEVICE AND EXTREME ULTRAVIOLET LIGHT GENERATION APPARATUS
    2.
    发明申请
    TARGET SUPPLY DEVICE AND EXTREME ULTRAVIOLET LIGHT GENERATION APPARATUS 审中-公开
    目标供应装置和极光超紫外灯发光装置

    公开(公告)号:US20150144809A1

    公开(公告)日:2015-05-28

    申请号:US14611914

    申请日:2015-02-02

    CPC classification number: H05G2/006 H05G2/005 H05G2/008

    Abstract: A target supply device may include: a tank including a storage portion that stores a target material and a supply portion that is in communication with the storage portion, the target material flowing into the supply portion; a nozzle including a nozzle hole that is in communication with the supply portion to be fed with the target material; and a coating portion that covers a wall surface of the nozzle hole.

    Abstract translation: 目标供给装置可以包括:储存器,包括存储目标材料的存储部分和与所述存储部分连通的供应部分,所述目标材料流入所述供应部分; 喷嘴,其包括与要供给的目标材料的供给部连通的喷嘴孔; 以及覆盖喷嘴孔的壁面的涂布部。

    EXTREME UV LIGHT GENERATION DEVICE
    3.
    发明申请

    公开(公告)号:US20190116655A1

    公开(公告)日:2019-04-18

    申请号:US16214435

    申请日:2018-12-10

    Abstract: An extreme UV light generation device may include: a chamber having a plasma generation region at an inside of the chamber, the chamber receiving a target substance externally supplied to the plasma generation region; an outlet port provided on the chamber; a magnetic field generating unit configured to generate a magnetic field to converge cations on the outlet port, the cations being generated from the target substance that has been turned into plasma in the plasma generation region; an electron emission unit configured to emit electrons neutralizing the cations; and an exhaust tube joined to the outlet port and through which a neutralized substance obtained by neutralizing the cations flows.

    TWO-BEAM INTERFERENCE APPARATUS AND TWO-BEAM INTERFERENCE EXPOSURE SYSTEM
    5.
    发明申请
    TWO-BEAM INTERFERENCE APPARATUS AND TWO-BEAM INTERFERENCE EXPOSURE SYSTEM 有权
    两束干扰装置和两束干扰曝光系统

    公开(公告)号:US20130135601A1

    公开(公告)日:2013-05-30

    申请号:US13681744

    申请日:2012-11-20

    CPC classification number: G03B27/522 G03F7/70408

    Abstract: A two-beam interference apparatus may include a wafer stage on which a wafer may be set, a beam splitter to split first laser light into second and third laser light having a beam intensity distribution elongated in a first direction within a surface of the wafer, and an optical system to guide the second and third laser light onto the wafer. The wafer is irradiated with the second laser light from a second direction perpendicular to the first direction, and the third laser light from a third direction perpendicular to the first direction but different from the second direction, to thereby cause interference of the second and third laser light on the wafer. This apparatus increases the accuracy of the two-beam interference exposure.

    Abstract translation: 双光束干涉装置可以包括其上可以设置晶片的晶片台,分束器,用于将第一激光分离成具有沿晶片表面内的第一方向延伸的光束强度分布的第二和第三激光, 以及将第二和第三激光引导到晶片上的光学系统。 从垂直于第一方向的第二方向照射第二激光,从与第一方向垂直但与第二方向不同的第三方向照射第三激光,从而引起第二和第三激光的干涉 光在晶圆上。 该装置增加了双光束干涉曝光的精度。

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