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公开(公告)号：US11309870B2
公开(公告)日：2022-04-19
申请号：US16945438
申请日：2020-07-31
发明人： Jongchang Kang , Ara Kurdoghlian , Mehran Mokhtari , Igal Bilik
摘要： The present application relates to a method and apparatus for implementing a radar array including a gate bias source for providing a first variable voltage, a back gate well control for providing a second variable voltage, and a field effect transistor having a drain, a source, a gate and a back gate well control, the field effect transistor being further configured to couple an alternating current radar signal between the drain and the source and to adjust a phase of the alternating current radar in response to first variable voltage applied to the gate and the second variable voltage applied to the back gate well control.
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公开(公告)号：US20220037752A1
公开(公告)日：2022-02-03
申请号：US16945438
申请日：2020-07-31
发明人： Jongchang Kang , Ara Kurdoghlian , Mehran Mokhtari , Igal Bilik
摘要： The present application relates to a method and apparatus for implementing a radar array including a gate bias source for providing a first variable voltage, a back gate well control for providing a second variable voltage, and a field effect transistor having a drain, a source, a gate and a back gate well control, the field effect transistor being further configured to couple an alternating current radar signal between the drain and the source and to adjust a phase of the alternating current radar in response to first variable voltage applied to the gate and the second variable voltage applied to the back gate well control.
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