- 专利标题: Field effect transistor (FET) configured to phase shift a radar signal using first and second variable voltages applied to a gate and a back gate of the FET
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申请号: US16945438申请日: 2020-07-31
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公开(公告)号: US11309870B2公开(公告)日: 2022-04-19
- 发明人: Jongchang Kang , Ara Kurdoghlian , Mehran Mokhtari , Igal Bilik
- 申请人: GM GLOBAL TECHNOLOGY OPERATIONS LLC
- 申请人地址: US MI Detroit
- 专利权人: GM GLOBAL TECHNOLOGY OPERATIONS LLC
- 当前专利权人: GM GLOBAL TECHNOLOGY OPERATIONS LLC
- 当前专利权人地址: US MI Detroit
- 代理机构: Lorenz & Kopf LLP
- 主分类号: H03H11/20
- IPC分类号: H03H11/20 ; H01P1/18 ; H01Q3/36 ; H01P1/185 ; H03H11/16
摘要:
The present application relates to a method and apparatus for implementing a radar array including a gate bias source for providing a first variable voltage, a back gate well control for providing a second variable voltage, and a field effect transistor having a drain, a source, a gate and a back gate well control, the field effect transistor being further configured to couple an alternating current radar signal between the drain and the source and to adjust a phase of the alternating current radar in response to first variable voltage applied to the gate and the second variable voltage applied to the back gate well control.
公开/授权文献
- US20220037752A1 FIELD EFFECT TRANSISTOR PHASE SHIFTER 公开/授权日:2022-02-03
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