公开(公告)号：US3752118A

公开(公告)日：1973-08-14

申请号：US3752118D

申请日：1971-10-13

Applicant: FAIRCHILD CAMERA INSTR CO

Inventor： SOLOMON R ,  DE FEVERE D

IPC: C30B19/06 ,  B05C3/09

CPC classification number: C30B19/062

Abstract: Apparatus and method for the deposition of semiconductor material onto semiconductor wafers by immersing them in a source of liquid semiconductor material. The apparatus includes a chamber, a wafer holder, and a plug, the plug adapted to rest upon the liquid residing in the chamber during mixing of the liquid, and to be pushed through the liquid, thereby forcing the liquid to flow through the space between the plug and the walls of the chamber, that space acting as a filter to prevent solid contaminants from coming into contact with the wafers in the holder. The floating plug also serves to prevent volatilization of constituents during the mixing of the semiconductor and dopants.

公开(公告)号：US3759759A

公开(公告)日：1973-09-18

申请号：US3759759D

申请日：1972-03-20

Applicant: FAIRCHILD CAMERA INSTR CO

Inventor： SOLOMON R

IPC: C30B19/06 ,  H01L21/208 ,  H01L7/38

CPC classification number: C30B19/063 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02625

Abstract: EPITAXIAL LAYERS OF III-V COMPOUNDS ARE GROWN ON THE FACING SURFACES OF A PAIR OF PARALLED, SPACED-APART WAFERS BY FORCING A SMALL QUANTITY OF A SOLUTION SATURATED WITH A III-V COMPOUND BETWEEN THE WAFERS FOR SELECTED TIME. LOWERING THE TEMPERATURE OF THE SOLUTION PRECIPITATES THE III-V COMPOUND EPITIAXIALLY ONTO THE ADJACENT SURFACES OF THE WAFERS.