公开(公告)号：US20160087221A1

公开(公告)日：2016-03-24

申请号：US14436960

申请日：2014-09-03

Applicant: BOE Technology Group Co., Ltd.

Inventor： Fei LIU ,  Xiaoguang XU ,  Xue GAO

IPC: H01L51/00 ,  C07D519/00 ,  C07D495/22

CPC classification number: H01L51/0061 ,  C07D495/22 ,  C07D519/00 ,  C09K11/06 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0071 ,  H01L51/0072 ,  H01L51/0085 ,  H01L51/5056 ,  H05B33/14 ,  H05B33/22

Abstract: The present invention relates to the field of organic electroluminescent technology, particularly relates to an aromatic amine derivative, its preparation method, uses and organic electroluminescent devices. The technical aim of the present invention is to improve the film forming ability and the redox repeatability. The aromatic amine derivative has the structure of formula I, wherein, R1, R2, R3 and R4 each independently represent a hydrogen, a substituted or unsubstituted C1-C40 alkyl, a substituted or unsubstituted C1-C40 alkoxy, a substituted or unsubstituted C3-C40 cycloalkyl, a substituted or unsubstituted C6-C50 aryl group, a substituted or unsubstituted C3-C50 heteroaryl containing one or two heteroatoms selected from N, O and S, or a substituted or unsubstituted C10-C40 fused aryl group formed together with the phenyl group linked therewith; wherein, m, n, p and q each independently represent 0, 1, 2, 3, 4 or 5; the substituents are one or more groups selected from the group consisting of a halogen, a C1-C10 alkyl, a C1-C10 alkoxy, a C3-C20 cycloalkyl, a C6-C20 aryl group or a C4-C20 heteroaryl group. The present invention may be applied in organic electroluminescent devices.

Abstract translation: 本发明涉及有机电致发光技术领域，特别涉及芳族胺衍生物，其制备方法，用途和有机电致发光器件。 本发明的技术目的是提高成膜能力和氧化还原重复性。 芳香胺衍生物具有式I的结构，其中R 1，R 2，R 3和R 4各自独立地表示氢，取代或未取代的C 1 -C 40烷基，取代或未取代的C 1 -C 40烷氧基，取代或未取代的C 3 -C 40烷基， C 40环烷基，取代或未取代的C 6 -C 50芳基，取代或未取代的含有一个或两个选自N，O和S的杂原子的C 3 -C 50杂芳基，或与苯基一起形成的取代或未取代的C 10 -C 40稠合芳基 与之联系; 其中，m，n，p和q各自独立地表示0,1,2,3,4或5; 取代基是一个或多个选自卤素，C 1 -C 10烷基，C 1 -C 10烷氧基，C 3 -C 20环烷基，C 6 -C 20芳基或C 4 -C 20杂芳基的基团。 本发明可以应用于有机电致发光器件。

公开(公告)号：US20180315777A1

公开(公告)日：2018-11-01

申请号：US15508484

申请日：2016-05-20

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Liangchen YAN ,  Guangcai YUAN ,  Xiaoguang XU ,  Lei WANG ,  Junbiao PENG ,  Linfeng LAN

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/417 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66969

Abstract: A thin-film transistor (TFT) is provided in this disclosure, which comprises Sn-doped ZrO2. This oxide semiconductor material can be used in a semiconductor layer of a TFT, and a mass percentage of Sn doped in the ZrO2 is about 1%-95%. A semiconductor layer comprising Sn-doped ZrO2 exhibits higher acid tolerance after annealing. This disclosure also provides a method for fabricating a TFT, which comprises: (i) forming a semiconductor layer, wherein the semiconductor layer comprises Sn-doped ZrO2, and (ii) annealing the semiconductor layer.

公开(公告)号：US20170077307A1

公开(公告)日：2017-03-16

申请号：US15123177

申请日：2015-09-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai YUAN ,  Liangchen YAN ,  Xiaoguang XU ,  Lei WANG ,  Junbiao PENG ,  Linfeng LAN

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02565 ,  H01L21/34 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.

Abstract translation: 本公开公开了属于平板显示器领域的氧化物半导体薄膜，薄膜晶体管，制造方法和装置。 氧化物半导体薄膜由含有锆和铟的氧化物制成。 制造氧化物半导体薄膜的方法包括使用含有锆和铟的氧化物制备靶，溅射靶以获得氧化物半导体薄膜。

公开(公告)号：US20190067609A1

公开(公告)日：2019-02-28

申请号：US15765262

申请日：2017-09-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Liangchen YAN ,  Xiaoguang XU ,  Lei WANG ,  Junbiao PENG ,  Linfeng LAN

IPC: H01L51/05

Abstract: A method for manufacturing a semiconductor thin film includes sequentially forming a first semiconductor layer, an intermediate layer, and a second semiconductor layer over a substrate. The first semiconductor layer and the second semiconductor layer can be one and another of an n-type semiconductor layer and a p-type semiconductor layer. At least one of the first semiconductor layer, the intermediate layer, or the second semiconductor layer is formed via a solution process. The n-type semiconductor layer can include indium oxide. The intermediate layer can include a self-assembly material. The p-type semiconductor layer can include a p-type organic semiconductor material, and can be pentacene. On the basis, a semiconductor thin film manufactured thereby, a semiconductor thin film transistor, and a display apparatus, are also disclosed.

公开(公告)号：US20180138210A1

公开(公告)日：2018-05-17

申请号：US15303357

申请日：2016-01-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai YUAN ,  Liangchen YAN ,  Xiaoguang XU ,  Lei WANG ,  Junbiao PENG ,  Linfeng LAN

IPC: H01L27/12 ,  H01L27/15 ,  G02F1/1335 ,  H01L33/00

CPC classification number: H01L27/1218 ,  G02F1/133603 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/156 ,  H01L29/786 ,  H01L33/005

Abstract: A metal oxide thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the metal oxide thin film transistor includes forming a gate electrode (141), a gate insulating layer (130), an active layer (113) and source and drain electrodes (121, 122) of a thin film transistor on a base substrate. The active layer is prepared by using a metal oxide thin film, and an electrochemical oxidation process is performed on the metal oxide thin film during preparing the active layer, and the metal oxide thin film after the electrochemical oxidation process is patterned to form the active layer of the thin film transistor. By using the manufacturing method of the embodiment, oxygen vacancies of the metal oxide thin film can be reduced, a concentration of free carriers thereof can be controlled, the prepared thin film transistor has good stability, and it is not necessary to add additional photolithography process, slightly affecting the cost.

公开(公告)号：US20160282975A1

公开(公告)日：2016-09-29

申请号：US14802703

申请日：2015-07-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chunwei WU ,  Chungchun LEE ,  Yanfeng WANG ,  Xiaoguang XU

IPC: G06F3/042 ,  H01L27/144 ,  H01L29/786 ,  H01L29/66 ,  H01L31/0224 ,  H01L31/032 ,  H01L31/18 ,  H01L31/113 ,  H01L49/02

Abstract: The present disclosure provides an optical sensing unit, a touch panel, a method for manufacturing the optical sensing unit, a method for manufacturing the touch panel, and a display device. The optical sensing unit includes a Photo thin film transistor (TFT), a storage capacitor for storing a leakage current generated by the Photo TFT, and a Readout TFT for reading out an electric signal stored in the storage capacitor. The method for manufacturing the optical sensing unit includes a step of forming a gate electrode of the Readout TFT capable of shielding an active layer of the Readout TFT and preventing the active layer from being exposed to an ambient light beam.

Abstract translation: 本公开提供了一种光学感测单元，触摸面板，用于制造光学感测单元的方法，制造触摸面板的方法以及显示装置。 光学感测单元包括一个Photo薄膜晶体管（TFT），一个用于存储由Photo TFT产生的漏电流的存储电容器，以及一个用于读出存储在存储电容器中的电信号的读出TFT。 用于制造光学感测单元的方法包括形成能够屏蔽读出TFT的有源层并且防止有源层暴露于环境光束的读出TFT的栅电极的步骤。

公开(公告)号：US20240319814A1

公开(公告)日：2024-09-26

申请号：US18246322

申请日：2022-04-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shuai WANG ,  Dexing QI ,  Hui HUA ,  Yingzi WANG ,  Dongsheng HUANG ,  Li ZHOU ,  Xiaoguang XU

IPC: G06F3/041 ,  G06F3/01

CPC classification number: G06F3/0416 ,  G06F3/016 ,  G06F3/04142 ,  G06F2203/04105

Abstract: This application discloses a touch panel and a human-computer interaction method based on a touch panel. The touch panel includes a base substrate, at least one pressure detector and at least one actuator arranged on the base substrate, and a driving circuit. The at least one pressure detector is electrically connected to the driving circuit, and the driving circuit is electrically connected to the at least one actuator.

公开(公告)号：US20180090601A1

公开(公告)日：2018-03-29

申请号：US15515004

申请日：2016-05-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Liangchen YAN ,  Guangcai YUAN ,  Xiaoguang XU ,  Lei WANG ,  Junbiao PENG ,  Linfeng LAN

IPC: H01L29/66 ,  H01L21/443 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L29/786 ,  C23C14/18 ,  C23C14/20 ,  C23C14/58 ,  C25D11/26 ,  C25D11/34 ,  C25D11/04 ,  C25D11/02

Abstract: A thin-film transistor (TFT) and a manufacturing method thereof. The manufacturing method for the TFT includes: depositing metal film layers on a substrate by a direct current (DC) sputtering method; and forming a metal oxide film layer or metal oxide film layers by completely oxidizing or partially oxidizing the metal film layers. The TFT includes a gate electrode layer and a gate insulating layer which are tightly integrated.

公开(公告)号：US20180061990A1

公开(公告)日：2018-03-01

申请号：US15534415

申请日：2016-12-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Liangchen YAN ,  Guangcai YUAN ,  Xiaoguang XU ,  Lei WANG ,  Junbiao PENG ,  Linfeng LAN

IPC: H01L29/786 ,  H01L29/49 ,  H01L29/66 ,  H01L21/34 ,  H01L27/12

Abstract: The present disclosure provides an active layer, a thin film transistor, an array substrate, and a display apparatus, and fabrication methods thereof. A method for fabricating an active layer in a thin film transistor is provided by forming a thin film by a direct current (DC) sputtering process; and etching the thin film to form the active layer. The thin film is made of a material selected to provide the active layer with a carrier concentration of at least approximately 1×1017 cm−3 and a carrier mobility of at least approximately 20 cm2/Vs.

公开(公告)号：US20170141193A1

公开(公告)日：2017-05-18

申请号：US15303231

申请日：2015-10-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai YUAN ,  Liangchen YAN ,  Xiaoguang XU ,  Lei WANG ,  Junbiao PENG ,  Linfeng LAN

IPC: H01L29/24 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/24 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present disclosure provides a TFT, an array substrate, their manufacturing method, and a display device. The method for manufacturing the TFT includes a step of forming a pattern of a semiconductor active layer on a transparent substrate through a patterning process, and the pattern of the semiconductor active layer includes a lanthanum boride pattern.