公开(公告)号：US11264507B2

公开(公告)日：2022-03-01

申请号：US16078160

申请日：2017-12-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaolong He ,  Dongsheng Li ,  Shengguang Ban ,  Rui Huang ,  Dongcan Mi

IPC: H01L29/786 ,  H01L29/267 ,  H01L29/45 ,  H01L29/66 ,  H01L21/4763 ,  H01L27/12

Abstract: A thin film transistor and a method for manufacturing the same, an array substrate and an electronic device. The thin film transistor includes a gate, a gate insulator, an active layer, a source and a drain. A protective structure is disposed on a side of the source and the drain close to the gate.

公开(公告)号：US10217851B2

公开(公告)日：2019-02-26

申请号：US15707827

申请日：2017-09-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jing Niu ,  Shuang Sun ,  Fangzhen Zhang ,  Dongcan Mi

IPC: H01L29/66 ,  H01L21/443 ,  H01L21/4763 ,  H01L29/786 ,  H01L27/12

Abstract: Embodiments of the disclosure provide an array substrate and a manufacturing method thereof, and a display device. The method includes: forming a semiconductor material film, a first insulation material film and a first conductive material film successively on a base substrate, and processing these films through a single patterning process to form an active pattern, a gate insulation pattern and a gate electrode; forming a second insulation layer and forming two contact holes in the second insulation layer and gate insulation pattern; forming a second conductive material film and forming two contact structures from portions of this layer; and forming a third conductive material film, and processing this layer through a single patterning process to form a pixel electrode, and source and drain electrodes being in direct contact with the two contact structures respectively, the pixel electrode and one contact structure being integrated into one piece.

公开(公告)号：US20180122924A1

公开(公告)日：2018-05-03

申请号：US15707827

申请日：2017-09-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jing Niu ,  Shuang Sun ,  Fangzhen Zhang ,  Dongcan Mi

IPC: H01L29/66 ,  H01L27/12 ,  H01L29/786 ,  H01L21/443 ,  H01L21/4763

CPC classification number: H01L29/66969 ,  H01L21/443 ,  H01L21/47635 ,  H01L27/1225 ,  H01L27/1288 ,  H01L29/78618 ,  H01L29/7869

Abstract: Embodiments of the disclosure provide an array substrate and a manufacturing method thereof, and a display device. The method includes: forming a semiconductor material film, a first insulation material film and a first conductive material film successively on a base substrate, and processing these films through a single patterning process to form an active pattern, a gate insulation pattern and a gate electrode; forming a second insulation layer and forming two contact holes in the second insulation layer and gate insulation pattern; forming a second conductive material film and forming two contact structures from portions of this layer; and forming a third conductive material film, and processing this layer through a single patterning process to form a pixel electrode, and source and drain electrodes being in direct contact with the two contact structures respectively, the pixel electrode and one contact structure being integrated into one piece.