公开(公告)号：US3877054A

公开(公告)日：1975-04-08

申请号：US41386573

申请日：1973-11-08

Applicant: BELL TELEPHONE LABOR INC

Inventor： BOULIN DAVID MCELROY ,  KAHNG DAWON ,  LIGENZA JOSEPH RAYMOND ,  SUNDBURG WILLIAM JOSEPH

IPC: H01L21/8247 ,  G11C16/04 ,  H01L29/788 ,  H01L29/792 ,  H01L11/00 ,  H01L15/00

CPC classification number: H01L29/792 ,  G11C16/0466

Abstract: An SI.sub.1 I.sub.2 M (semiconductor-insulator.sub.1 insulator.sub.2 -metal) memory structure is characterized by the presence of an impurity, such as tungsten, concentrated in a region including the interface ("I.sub.1 I.sub.2 ") between the I.sub.1 and I.sub.2 layers. This metallic impurity provides a well-defined I.sub.1 I.sub.2 interface region, including a potential minimum ("well"), such that the I.sub.1 I.sub.2 interface can be filled with electronic charge carriers (electrons or holes) which have been transported from the semiconductor under the influence of electric fields applied across the structure. The presence versus absence of captured electronic charge carriers at the I.sub.1 I.sub.2 interface can be used as a memory indicator.