公开(公告)号：US3896479A

公开(公告)日：1975-07-22

申请号：US44754774

申请日：1974-03-04

Applicant: BELL TELEPHONE LABOR INC

Inventor： DI LORENZO JAMES VINCENT ,  ROZGONYI GEORGE ARTHUR

IPC: H01L21/60 ,  H01L23/36 ,  H01L29/864 ,  H01L5/00

CPC classification number: H01L24/33 ,  H01L23/36 ,  H01L24/48 ,  H01L24/83 ,  H01L29/864 ,  H01L2224/4847 ,  H01L2224/8319 ,  H01L2224/83801 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01043 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/10329 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/3011 ,  Y10S148/02 ,  H01L2924/01031 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/45099

Abstract: Substrate tensile stresses resulting from the combination of an electroplated gold or silver heat sink with a metal contact on III-V semiconductor devices, such as GaAs IMPATT diodes, may be substantially compensated by interposing a layer of tungsten under compressive stress between the contact layer and the heat sink. Since gold or silver is not easily plated on tungsten, a thin layer of platinum is deposited over the tungsten layer prior to forming the heat sink.