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1.发明授权Electron beam charge storage device employing diode array and establishing an impurity gradient in order to reduce the surface recombination velocity in a region of electron-hole pair production 失效使用二极管阵列的电子束充电储存装置，并在减少电子对生产区域中的表面重建速度的前提下建立一个减少灰度级
公开(公告)号：US3458782A
公开(公告)日：1969-07-29
申请号：US3458782D
申请日：1967-10-18
Applicant: BELL TELEPHONE LABOR INC
Inventor： BUCK THOMAS M , DALTON JOHN V
CPC classification number: H01J29/455 , H01L27/00 , Y10S148/049 , Y10S148/146 , Y10S148/172 , Y10S257/917
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公开(公告)号：US3419746A
公开(公告)日：1968-12-31
申请号：US64125767
申请日：1967-05-25
Applicant: BELL TELEPHONE LABOR INC
Inventor： CROWELL MERTON H , DALTON JOHN V , GORDON EUGENE I , LABUDA EDWARD F
CPC classification number: H01J29/453 , H01L27/00 , Y10S148/026 , Y10S148/051 , Y10S148/122 , Y10S148/172
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