公开(公告)号：US20150371851A1

公开(公告)日：2015-12-24

申请号：US14655404

申请日：2014-01-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Kwangduk Douglas LEE ,  Wonseok LEE ,  Martin Jay SEAMONS

IPC: H01L21/033 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/0332 ,  C23C16/26 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/3081 ,  H01L21/31144

Abstract: Methods for forming an amorphous carbon layer with desired film mechanical strength low film stress as well as optical film properties are provided. In one embodiment, a method of forming an amorphous carbon layer includes forming a plasma of a deposition gas mixture including a hydrocarbon gas supplied in a processing chamber by application of a RF source power, applying a low frequency RF bias power and a high frequency RF bias power to a first electrode disposed in the processing chamber, controlling a power ratio of the high frequency to the low frequency RF bias power, and forming an amorphous carbon layer on a substrate disposed in the processing chamber.

Abstract translation: 提供了形成具有期望的膜机械强度低膜应力的非晶碳层以及光学膜性质的方法。 在一个实施方案中，形成无定形碳层的方法包括通过施加RF源功率，施加低频RF偏置功率和施加高频RF偏压功率来形成包括在处理室中供应的烃气体的沉积气体混合物的等离子体 将偏置功率设置在处理室中的第一电极，控制高频与低频RF偏置功率的功率比，以及在设置在处理室中的衬底上形成无定形碳层。

公开(公告)号：US20180323042A1

公开(公告)日：2018-11-08

申请号：US15957054

申请日：2018-04-19

Applicant: Applied Materials, Inc.

Inventor： Haitao WANG ,  Anwar HUSAIN ,  Kartik RAMASWAMY ,  Jason A. KENNEY ,  Jeffrey LUDWIG ,  Chunlei ZHANG ,  Wonseok LEE

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32642 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/6833

Abstract: The present disclosure generally relates to methods of and apparatuses for controlling a plasma sheath near a substrate edge. The apparatus includes an auxiliary electrode that may be positioned adjacent an electrostatic chuck. The auxiliary electrode is recursively fed from a power source using equal length and equal impedance feeds. The auxiliary electrode is vertically actuatable, and is tunable with respect to ground or other frequencies responsible for plasma generation. Methods of using the same are also provided.

公开(公告)号：US20140329376A1

公开(公告)日：2014-11-06

申请号：US14262400

申请日：2014-04-25

Applicant: Applied Materials, Inc.

Inventor： Errol Antonio C. SANCHEZ ,  Xinyu BAO ,  Wonseok LEE ,  David Keith CARLSON ,  Zhiyuan YE

IPC: H01L21/02

CPC classification number: H01L21/02546 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/762

Abstract: Embodiments described herein generally relate to a method of fabrication of a device structure comprising Group III-V elements on a substrate. A surface may be formed on a substrate and a Group III-V material may be grown from the surface to form a Group III-V device structure in a trench isolated between a dielectric layer. A final critical dimension of the device structure may be trimmed to achieve a suitably sized node structure.

Abstract translation: 本文描述的实施例通常涉及在衬底上制造包含III-V族元素的器件结构的方法。 可以在衬底上形成A 111表面，并且可以从III族表面生长III-V族材料，以在介电层之间隔离的沟槽中形成III-V族器件结构。 可以修剪设备结构的最终关键尺寸以实现适当尺寸的节点结构。

公开(公告)号：US20190088518A1

公开(公告)日：2019-03-21

申请号：US15710683

申请日：2017-09-20

Applicant: Applied Materials, Inc.

Inventor： Travis Lee KOH ,  Philip Allan KRAUS ,  Wonseok LEE

IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  C23C16/511 ,  C23C16/458 ,  C23C16/505 ,  C23C16/455

Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.