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    GAS PHASE PARTICLE REDUCTION IN PECVD CHAMBER
    2.
    发明申请
    GAS PHASE PARTICLE REDUCTION IN PECVD CHAMBER 审中-公开

    公开(公告)号：US20180294139A1

    公开(公告)日：2018-10-11

    申请号：US15945413

    申请日：2018-04-04

    Applicant: Applied Materials, Inc.

    Inventor： Bhaskar KUMAR ,  Sidharth BHATIA ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Ganesh BALASUBRAMANIAN

    IPC: H01J37/32 ,  H01L21/02 ,  H01L21/285 ,  C23C16/52

    Abstract: The present disclosure relates to methods and apparatus for reducing particle contamination on substrates in a plasma process chamber. In one embodiment, by applying a DC power to an electrode surrounding a processing region, the boundary of a plasma region formed in the processing region extends closer to the chamber body and outside of the diameter of the substrate support. In another embodiment, by applying a negative bias to an electrode or a positive bias to the lid, negatively charged species located at the boundary of the plasma region are lifted by the electrostatic force created by the negative bias or the positive bias. As a result, species located at the boundary of the plasma region will not fall onto the edge of the substrate disposed on the substrate support as the electric power for sustaining the plasma region is turned off, leading to reduced particle contamination on the substrate.

    PLASMA DENSITY CONTROL ON SUBSTRATE EDGE
    3.
    发明申请
    PLASMA DENSITY CONTROL ON SUBSTRATE EDGE 审中-公开

    公开(公告)号：US20200381222A1

    公开(公告)日：2020-12-03

    申请号：US16996004

    申请日：2020-08-18

    Applicant: Applied Materials, Inc.

    Inventor： Bhaskar KUMAR ,  Prashanth KOTHNUR ,  Sidharth BHATIA ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Ganesh BALASUBRAMANIAN ,  Changgong WANG

    IPC: H01J37/32

    Abstract: Embodiments of the present disclosure generally relate to apparatuses for reducing particle contamination on substrates in a plasma processing chamber. In one or more embodiments, an edge ring is provided and includes a top surface, a bottom surface opposite the top surface and extending radially outward, an outer vertical wall extending between and connected to the top surface and the bottom surface, an inner vertical wall opposite the outer vertical wall, an inner lip extending radially inward from the inner vertical wall, and an inner step disposed between and connected to the inner wall and the bottom surface. During processing, the edge ring shifts the high plasma density zone away from the edge area of the substrate to avoid depositing particles on the substrate when the plasma is de-energized.

    APPARATUS AND METHODS FOR REMOVING CONTAMINANT PARTICLES IN A PLASMA PROCESS
    4.
    发明申请
    APPARATUS AND METHODS FOR REMOVING CONTAMINANT PARTICLES IN A PLASMA PROCESS 审中-公开

    公开(公告)号：US20200350146A1

    公开(公告)日：2020-11-05

    申请号：US16927618

    申请日：2020-07-13

    Applicant: Applied Materials, Inc.

    Inventor： Bhaskar KUMAR ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Sidharth BHATIA ,  Ganesh BALASUBRAMANIAN

    IPC: H01J37/32

    Abstract: A method and apparatus for operating a plasma processing chamber includes performing a plasma process at a process pressure and a pressure power to generate a plasma. A first ramping-down stage starts in which the process power and the process pressure are ramped down substantially simultaneously to an intermediate power level and an intermediate pressure level, respectively. The intermediate power level and intermediate pressure level are preselected so as to raise a plasma sheath boundary above a threshold height from a surface of a substrate. A purge gas is flowed from a showerhead assembly at a sufficiently high rate to sweep away contaminant particles trapped in the plasma such that one or more contaminant particles move outwardly of an edge of the substrate. A second ramping-down stage starts where the intermediate power level and the intermediate pressure level decline to a zero level and a base pressure, respectively.

    APPARATUS AND METHODS FOR REMOVING CONTAMINANT PARTICLES IN A PLASMA PROCESS
    6.
    发明申请
    APPARATUS AND METHODS FOR REMOVING CONTAMINANT PARTICLES IN A PLASMA PROCESS 审中-公开

    公开(公告)号：US20190259585A1

    公开(公告)日：2019-08-22

    申请号：US16262307

    申请日：2019-01-30

    Applicant: Applied Materials, Inc.

    Inventor： Bhaskar KUMAR ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Sidharth BHATIA ,  Ganesh BALASUBRAMANIAN

    IPC: H01J37/32

    Abstract: A method and apparatus for operating a plasma processing chamber includes performing a plasma process at a process pressure and a pressure power to generate a plasma. A first ramping-down stage starts in which the process power and the process pressure are ramped down substantially simultaneously to an intermediate power level and an intermediate pressure level, respectively. The intermediate power level and intermediate pressure level are preselected so as to raise a plasma sheath boundary above a threshold height from a surface of a substrate. A purge gas is flowed from a showerhead assembly at a sufficiently high rate to sweep away contaminant particles trapped in the plasma such that one or more contaminant particles move outwardly of an edge of the substrate. A second ramping-down stage starts where the intermediate power level and the intermediate pressure level decline to a zero level and a base pressure, respectively.

    PLASMA DENSITY CONTROL ON SUBSTRATE EDGE
    7.
    发明申请
    PLASMA DENSITY CONTROL ON SUBSTRATE EDGE 审中-公开

    公开(公告)号：US20180294146A1

    公开(公告)日：2018-10-11

    申请号：US15947393

    申请日：2018-04-06

    Applicant: Applied Materials, Inc.

    Inventor： Bhaskar KUMAR ,  Prashanth KOTHNUR ,  Sidharth BHATIA ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Ganesh BALASUBRAMANIAN ,  Changgong WANG

    IPC: H01J37/32

    Abstract: Implementations of the present disclosure generally relate to an apparatus for reducing particle contamination on substrates in a plasma processing chamber. The apparatus for reduced particle contamination includes a chamber body, a lid coupled to the chamber body. The chamber body and the lid define a processing volume therebetween. The apparatus also includes a substrate support disposed in the processing volume and an edge ring. The edge ring includes an inner lip disposed over a substrate, a top surface connected to the inner lip, a bottom surface opposite the top surface and extending radially outward from the substrate support, and an inner step between the bottom surface and the inner lip. To avoid depositing the particles on the substrate being processed when the plasma is de-energized, the edge ring shifts the high plasma density zone away from the edge area of the substrate.

    IN-SITU ETCH RATE DETERMINATION FOR CHAMBER CLEAN ENDPOINT
    8.
    发明申请
    IN-SITU ETCH RATE DETERMINATION FOR CHAMBER CLEAN ENDPOINT 有权
    用于室内清洁端点的现场测量速率测定

    公开(公告)号：US20160314944A1

    公开(公告)日：2016-10-27

    申请号：US15136788

    申请日：2016-04-22

    Applicant: Applied Materials, Inc.

    Inventor： Sidharth BHATIA ,  Anjana M. PATEL ,  Abdul Aziz KHAJA

    IPC: H01J37/32

    CPC classification number: H01J37/32963 ,  H01J2237/334

    Abstract: Embodiments described herein relate to methods for determining a cleaning endpoint. A first plasma cleaning process may be performed in a clean chamber environment to determine a clean time function defined by a first slope. A second plasma cleaning process may be performed in an unclean chamber environment to determine a clean time function defined by a second slope. The first and second slope may be compared to determine a clean endpoint time.

    Abstract translation: 本文描述的实施例涉及用于确定清洁端点的方法。 可以在清洁室环境中执行第一等离子体清洁过程，以确定由第一斜率限定的清洁时间函数。 可以在不洁室的环境中进行第二等离子体清洗过程，以确定由第二斜率限定的清洁时间函数。 可以比较第一和第二斜率以确定干净的端点时间。

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