公开(公告)号：US20240379363A1

公开(公告)日：2024-11-14

申请号：US18582977

申请日：2024-02-21

Applicant: Applied Materials, Inc.

Inventor： Jianqiu GUO ,  Dong WANG ,  Shumao ZHANG ,  Liqi WU ,  ShihChung CHEN ,  Jiang LU

IPC: H01L21/28

Abstract: Methods are provided. In some embodiments, a method of forming a contact structure on a semiconductor substrate includes disposing a selective metal silicide layer on a surface of a contact structure by maintaining a first temperature of a substrate and providing a first carrier gas, a first metal-containing precursor, and a first hydrogen-containing precursor to a first deposition chamber. The method includes disposing a partially selective metal layer on a surface of the selective metal silicide layer and one or more surfaces of a cavity by maintaining a second temperature of the substrate and providing a second carrier gas, a second metal-containing precursor, and a reducing agent to the first deposition chamber or a second deposition chamber. The second metal-containing precursor and the reducing agent are introduced to the first deposition chamber or the second deposition chamber at a chamber pressure of about 50 T to about 150 T.

公开(公告)号：US20210287900A1

公开(公告)日：2021-09-16

申请号：US16817378

申请日：2020-03-12

Applicant: Applied Materials, Inc.

Inventor： Yixiong YANG ,  Wei LIU ,  Yuan-hui LO ,  Srinivas GANDIKOTA ,  Jacqueline Samantha WRENCH ,  Yongjing LIN ,  Wen Ting CHEN ,  ShihChung CHEN

IPC: H01L21/02

Abstract: The present disclosure provides methods for treating film layers in a substrate including positioning the substrate in a processing volume of a processing chamber. The substrate can have high aspect ratio features extending a depth from a substrate surface to a bottom surface. The feature can have a width defined by a first sidewall and a second sidewall. A film with a composition that includes metal is formed on the substrate surface and the first sidewall, the second sidewall, and the bottom surface of each feature. The film in the feature can have a seam extending substantially parallel to the first and second sidewalls. The film is annealed and exposed to an oxygen radical while converting the metal of the film to a metal oxide. The metal oxide is exposed to a hydrogen radical while converting the metal oxide to a metal fill layer.