公开(公告)号：US20250125181A1

公开(公告)日：2025-04-17

申请号：US18486072

申请日：2023-10-12

Applicant: Applied Materials, Inc.

Inventor： Vijay D. Parkhe ,  Onkara Swamy Kora Siddaramaiah ,  David Benjaminson ,  Ryan Pakulski ,  Anh N. Nguyen ,  Son T. Nguyen ,  Prashanth Rao

IPC: H01L21/683 ,  H01L21/67

Abstract: Exemplary semiconductor processing chambers may include a chamber body. The chambers may include a showerhead positioned atop the body. The chambers may include an electrostatic chuck assembly disposed within the body. The assembly may include a puck that may include a first plate including an electrically insulating material and that defines a substrate support surface. The puck may include a multi-zone heating assembly thermally coupled with the first plate. The puck may include bipolar electrodes. The puck may include a second plate that defines cooling channels. The assembly may include an insulator beneath the second plate. The assembly may include a base plate beneath the insulator. The assembly may include a shaft that may include a heater rod coupled with the heating assembly. The shaft may include a cooling fluid lumen fluidly coupled with the cooling channels. The shaft may include a power rod electrically coupled with a bipolar electrode.

公开(公告)号：US20230095095A1

公开(公告)日：2023-03-30

申请号：US17486616

申请日：2021-09-27

Applicant: Applied Materials, Inc.

Inventor： Saravanakumar Natarajan ,  Ryan Pakulski

IPC: H01J37/32 ,  H01L21/687

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a plurality of apertures. The systems may include a plurality of lid stacks. The systems may include a plurality of substrate supports. The systems may include a plurality of peripheral valves. Each peripheral valve may be disposed in one of the processing regions. Each peripheral valve may include a bottom plate coupled with the chamber body. The peripheral valve may include a bellow. The bellow may be coupled with the bottom plate. The peripheral valve may include a sealing ring having a body defining a central aperture. A bottom surface of the body may be coupled with the bellow. The body may define a recess having a diameter greater than that of a support plate of a substrate support.

公开(公告)号：US20230005765A1

公开(公告)日：2023-01-05

申请号：US17366761

申请日：2021-07-02

Applicant: Applied Materials, Inc.

Inventor： Son T. Nguyen ,  Kenneth D. Schatz ,  Anh N. Nguyen ,  Soonwook Jung ,  Ryan Pakulski ,  Anchuan Wang ,  Zihui Li

IPC: H01L21/67 ,  H01J37/32

Abstract: Exemplary semiconductor processing systems may include a processing chamber. The systems may include a remote plasma unit coupled with the processing chamber. The systems may include an adapter coupled between the remote plasma unit and the processing chamber. The adapter may be characterized by a first end and a second end opposite the first end. The remote plasma unit may be coupled with the adapter at the first end. The adapter may define a first central channel extending more than 50% of a length of the adapter from the first end of the adapter. The adapter may define a second central channel extending less than 50% of the length of the adapter from the second end of the adapter. The adapter may define a transition between the first central channel and the second central channel.

公开(公告)号：US20250093300A1

公开(公告)日：2025-03-20

申请号：US18885019

申请日：2024-09-13

Applicant: Applied Materials, Inc.

Inventor： Jia Pelpa ,  Mehran Moalem ,  Manuel A. Hernandez ,  Ryan Pakulski

IPC: G01N29/02 ,  G01N29/036 ,  G01N29/24 ,  H01L21/67

Abstract: A system can include a chamber body of a processing chamber, a substrate support assembly disposed within the chamber body and associated with a processing region, a radical sensor disposed within the processing chamber, and a controller. The radical sensor is to measure a change in resonant frequency of a radical sensor of the radical sensor, and the change in resonant frequency of the radical sensor correlates to a concentration of radical species associated with a target gas. The controller is to determine one or more conditions of the processing chamber based on the change in the resonant frequency of the radical sensor.

公开(公告)号：US20240304423A1

公开(公告)日：2024-09-12

申请号：US18181077

申请日：2023-03-09

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Joseph Behnke ,  Ryan Pakulski ,  Christopher L. Beaudry ,  Jonathan Strahle

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/50 ,  C23C16/56

CPC classification number: H01J37/32495 ,  C23C16/405 ,  C23C16/4404 ,  C23C16/45565 ,  C23C16/4583 ,  C23C16/50 ,  C23C16/56 ,  H01J37/32816 ,  H01J2237/0453

Abstract: The present technology is generally directed to semiconductor processing systems and methods. Systems and methods include a chamber having a plurality of chamber components, such as a pedestal, a lid stack, a faceplate, electrode, and a showerhead. The faceplate is supported with the lid stack and defines a plurality of first apertures and the showerhead is positioned between the faceplate and the pedestal and defines a plurality of second apertures. In systems and methods, the faceplate, the showerhead, the lid stack, the pedestal, or a combination thereof include an yttrium fluoride, yttrium oxyfluoride, or both yttrium fluoroide and yttrium oxyfluoride coating having a thickness of greater than 10 μm on at least a portion of the respective chamber component or combination thereof.