公开(公告)号：US20160020071A1

公开(公告)日：2016-01-21

申请号：US14694676

申请日：2015-04-23

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz KHAJA ,  Mohamad AYOUB ,  Jay D. PINSON, II ,  Juan Carlos ROCHA-ALVAREZ

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/40 ,  C23C16/44

CPC classification number: H01J37/32082 ,  C23C16/4404 ,  C23C16/4405 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/32862

Abstract: Embodiments of the present disclosure generally relate to methods for conditioning an interior wall surface of a remote plasma generator. In one embodiment, a method for processing a substrate is provided. The method includes exposing an interior wall surface of a remote plasma source to a conditioning gas that is in excited state to passivate the interior wall surface of the remote plasma source, wherein the remote plasma source is coupled through a conduit to a processing chamber in which a substrate is disposed, and the conditioning gas comprises an oxygen-containing gas, a nitrogen-containing gas, or a combination thereof. The method has been observed to be able to improve dissociation/recombination rate and plasma coupling efficiency in the processing chamber, and therefore provides repeatable and stable plasma source performance from wafer to wafer.

Abstract translation: 本公开的实施例一般涉及用于调节远程等离子体发生器的内壁表面的方法。 在一个实施例中，提供了一种用于处理衬底的方法。 该方法包括将远程等离子体源的内壁表面暴露于处于激发状态的调节气体以钝化远程等离子体源的内壁表面，其中远程等离子体源通过导管耦合到处理室，其中 设置基板，并且调节气体包括含氧气体，含氮气体或其组合。 已经观察到该方法能够改善处理室中的解离/复合速率和等离子体耦合效率，因此提供了从晶片到晶片的可重复和稳定的等离子体源性能。

公开(公告)号：US20190074163A1

公开(公告)日：2019-03-07

申请号：US16180784

申请日：2018-11-05

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz KHAJA ,  Mohamad AYOUB ,  Jay D. PINSON, II ,  Juan Carlos ROCHA-ALVAREZ

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/505

Abstract: Embodiments of the present disclosure generally relate to methods for conditioning an interior wall surface of a remote plasma generator. In one embodiment, a method for processing a substrate is provided. The method includes exposing an interior wall surface of a remote plasma source to a conditioning gas that is in excited state to passivate the interior wall surface of the remote plasma source, wherein the remote plasma source is coupled through a conduit to a processing chamber in which a substrate is disposed, and the conditioning gas comprises an oxygen-containing gas, a nitrogen-containing gas, or a combination thereof. The method has been observed to be able to improve dissociation/recombination rate and plasma coupling efficiency in the processing chamber, and therefore provides repeatable and stable plasma source performance from wafer to wafer.

公开(公告)号：US20180073142A9

公开(公告)日：2018-03-15

申请号：US14552273

申请日：2014-11-24

Applicant: Applied Materials, Inc.

Inventor： Karthik Janakiraman ,  Thomas NOWAK ,  Juan Carlos ROCHA-ALVAREZ ,  Mark A. FODOR ,  Dale R. DU BOIS ,  Amit BANSAL ,  Mohamad AYOUB ,  Eller Y. JUCO ,  Visweswaren SIVARAMAKRISHNAN ,  Hichem M'SAAD

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/44 ,  C23C16/503 ,  C23C16/505 ,  H01J37/32

CPC classification number: C23C16/45565 ,  C23C16/4412 ,  C23C16/458 ,  C23C16/4586 ,  C23C16/503 ,  C23C16/505 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32532 ,  H01J37/32541

Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.