公开(公告)号：US20240209500A1

公开(公告)日：2024-06-27

申请号：US18557675

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： Xi CEN ,  Wei Min CHAN ,  Kai WU ,  Peiqi WANG ,  Mingrui ZHAO ,  Michael C. KUTNEY ,  Kazuya DAITO ,  Harpreet SINGH

IPC: C23C16/44 ,  C23C16/02 ,  C23C16/04 ,  C23C16/455 ,  C23C16/54 ,  H01L21/285 ,  H01L21/67 ,  H01L21/768 ,  H01L23/532

CPC classification number: C23C16/4405 ,  C23C16/0281 ,  C23C16/045 ,  C23C16/45553 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/54 ,  H01L21/28562 ,  H01L21/67017 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53266

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process and a second radical generator for use in a chamber clean process.

公开(公告)号：US20240222128A1

公开(公告)日：2024-07-04

申请号：US18558388

申请日：2021-05-06

Applicant: Applied Materials, Inc.

Inventor： Mingrui ZHAO ,  Peiqi WANG ,  Kai WU ,  Harpreet SINGH ,  Michael C. KUTNEY

IPC: H01L21/285 ,  C23C16/02 ,  C23C16/06 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/768

CPC classification number: H01L21/28506 ,  C23C16/0281 ,  C23C16/06 ,  C23C16/4405 ,  C23C16/4554 ,  C23C16/52 ,  H01L21/76879

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process and a second radical generator for use in a chamber clean process. The processing system is configured to periodically condition the first radial generator by forming a plasma of a relatively low amount of a halogen-based gas.

公开(公告)号：US20160020454A1

公开(公告)日：2016-01-21

申请号：US14773146

申请日：2014-03-06

Applicant: APPLIED MATERIALS, INC.

Inventor： Fei C. WANG ,  Hooman BOLANDI ,  Connie P. WANG ,  Victor PEBENITO ,  Siqing LU ,  Michael C. KUTNEY ,  Joseph G. GORDON ,  Robert Z. BACHRACH

IPC: H01M4/04 ,  H01M4/1397 ,  B05B5/025 ,  H01M4/1393 ,  H01M4/36 ,  H01M4/1391 ,  H01M4/1395

CPC classification number: H01M4/0419 ,  B05B5/025 ,  B05B13/0221 ,  H01M4/0404 ,  H01M4/139 ,  H01M4/1391 ,  H01M4/1393 ,  H01M4/1395 ,  H01M4/1397 ,  H01M4/366

Abstract: A method and apparatus for forming battery active material on a substrate are disclosed. In one embodiment, an apparatus for depositing a battery active material on a surface of a substrate includes a substrate conveyor system for transporting the substrate within the apparatus, a material spray assembly disposed above the substrate conveyor system, and a first heating element disposed adjacent to the material spray assembly above the substrate conveyor system configured to heat the substrate. The material spray assembly has a 2-D array of nozzles configured to electrospray an electrode forming solution on the surface of the substrate.

Abstract translation: 公开了一种在衬底上形成电池活性材料的方法和装置。 在一个实施例中，用于在基板的表面上沉积电池活性材料的装置包括用于在设备内输送基板的基板输送机系统，设置在基板输送系统上方的材料喷涂组件和与基板输送系统相邻设置的第一加热元件 该基材输送系统上方的材料喷涂组件构造成加热该基材。 材料喷射组件具有被配置成在衬底的表面上电喷雾电极形成溶液的喷嘴的2-D阵列。