公开(公告)号：US20190252162A1

公开(公告)日：2019-08-15

申请号：US16269376

申请日：2019-02-06

Applicant: Applied Materials, Inc.

Inventor： Jun MA ,  Chen-An CHEN

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687 ,  C23C16/458

CPC classification number: H01J37/32724 ,  C23C16/4581 ,  C23C16/4586 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01L21/67248 ,  H01L21/67253 ,  H01L21/68735

Abstract: A pedestal for a semiconductor processing chamber is provided. The pedestal includes a first body comprising a ceramic material, wherein a plurality of heater elements are encapsulated within the first body, and a second body comprising a ceramic material, wherein one or more continuously curved grooves are formed in one or more surfaces of the second body. Additionally, the first body is coupled to the second body and encloses the grooves.

公开(公告)号：US20200328066A1

公开(公告)日：2020-10-15

申请号：US16829573

申请日：2020-03-25

Applicant: Applied Materials, Inc.

Inventor： Byung Seok KWON ,  Dong Hyung LEE ,  Prashant Kumar KULSHRESHTHA ,  Kwangduk Douglas LEE ,  Ratsamee LIMDULPAIBOON ,  Irfan JAMIL ,  Pyeong Youn ROH ,  Jun MA ,  Amit Kumar BANSAL ,  Tuan Anh NGUYEN ,  Juan Carlos ROCHA-ALVAREZ

IPC: H01J37/32 ,  C23C16/50 ,  C23C16/44 ,  C23C16/455

Abstract: A system and method for forming a film includes generating a plasma in a processing volume of a processing chamber to form the film on a substrate. The processing chamber may include a gas distributor configured to generate the plasma in the processing volume. Further, a barrier gas is provided into the processing volume to form a gas curtain around a plasma located in the processing volume. The barrier gas is supplied by a gas supply source through an inlet port disposed along a first side of the processing chamber. Further, an exhaust port is disposed along the first side of the processing chamber and the plasma and the barrier gas is purged via the exhaust port.

公开(公告)号：US20200161093A1

公开(公告)日：2020-05-21

申请号：US16663215

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Xiaopu LI ,  Kallol BERA ,  Edward P. HAMMOND, IV ,  Jonghoon BAEK ,  Amit Kumar BANSAL ,  Jun MA ,  Satoru KOBAYASHI

IPC: H01J37/32 ,  C23C16/505

Abstract: Embodiments described herein relate to apparatus and techniques for radio frequency (RF) phase control in a process chamber. A process volume is defined in the process chamber by a faceplate electrode and a support pedestal. A grounding bowl is disposed within the process chamber about the support pedestal opposite the process volume. The grounding bowl substantially fills a volume other than the process volume below the support pedestal. A phase tuner circuit is coupled to an RF mesh disposed in the support pedestal and the faceplate electrode. The tuner circuit adjusts a phase difference between a phase of the faceplate electrode and a phase of the RF mesh.

公开(公告)号：US20220181120A1

公开(公告)日：2022-06-09

申请号：US17677656

申请日：2022-02-22

Applicant: Applied Materials, Inc.

Inventor： Jun MA ,  Jian LI ,  David H. QUACH ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA-ALVAREZ

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/67

Abstract: In some embodiments, the semiconductor process apparatus comprises a conductive support comprising mesh, a conductive shaft comprising a conductive rod, and a plurality of connection elements. The plurality of connection elements are coupled to the mesh in parallel and are connected to the rod at a single junction. The plurality of connection elements help spread RF current, reducing localized heating in the substrate, resulting in a more uniform film deposition. Additionally, using connection elements that are merged and coupled to a single RF rod allow for the rod to be made of materials that can conduct RF current at lower temperatures.

公开(公告)号：US20200013586A1

公开(公告)日：2020-01-09

申请号：US16447083

申请日：2019-06-20

Applicant: Applied Materials, Inc.

Inventor： Jun MA ,  Jian LI ,  David H. QUACH ,  Amit Kumar BANSAL ,  Juan Carlos ROCHA

IPC: H01J37/32 ,  H01L21/67 ,  C23C16/458

Abstract: In some embodiments, the semiconductor process apparatus comprises a conductive support comprising mesh, a conductive shaft comprising a conductive rod, and a plurality of connection elements. The plurality of connection elements are coupled to the mesh in parallel and are connected to the rod at a single junction. The plurality of connection elements help spread RF current, reducing localized heating in the substrate, resulting in a more uniform film deposition. Additionally, using connection elements that are merged and coupled to a single RF rod allow for the rod to be made of materials that can conduct RF current at lower temperatures.

公开(公告)号：US20190355608A1

公开(公告)日：2019-11-21

申请号：US16381986

申请日：2019-04-11

Applicant: Applied Materials, Inc.

Inventor： Abdul Aziz KHAJA ,  Jun MA ,  Hyung Je WOO ,  Fei WU ,  Jian LI

IPC: H01L21/683 ,  H01L21/67

Abstract: A substrate support is disclosed. The substrate support has a dielectric body with a plurality of features formed thereon. A ledge surrounds the plurality of features about a periphery thereof. The features increase in number from a central region of the substrate support towards the ledge. A seasoning layer is optionally disposed on the dielectric body.

公开(公告)号：US20220403520A1

公开(公告)日：2022-12-22

申请号：US17893018

申请日：2022-08-22

Applicant: Applied Materials, Inc.

Inventor： Tuan Anh NGUYEN ,  Jason M. SCHALLER ,  Edward P. HAMMOND, IV ,  David BLAHNIK ,  Tejas ULAVI ,  Amit Kumar BANSAL ,  Sanjeev BALUJA ,  Jun MA ,  Juan Carlos ROCHA-ALVAREZ

IPC: C23C16/505 ,  C23C16/44 ,  C23C16/458

Abstract: Embodiments described herein relate to ground path systems providing a shorter and symmetrical path for radio frequency (RF) energy to propagate to a ground to reduce generation of the parasitic plasma. The ground path system bifurcates the processing volume of the chamber to form an inner volume that isolates an outer volume of the processing volume.