公开(公告)号：US20240055265A1

公开(公告)日：2024-02-15

申请号：US17886269

申请日：2022-08-11

Applicant: Applied Materials, Inc.

Inventor： Pradeep SAMPATH KUMAR ,  Norman L. TAM ,  Shashank SHARMA ,  Zhiming JIANG ,  Jingmin LENG ,  Victor CALDERON ,  Mahesh RAMAKRISHNA

IPC: H01L21/3065 ,  H01L21/67 ,  H01L29/66 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01L21/67207 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/6653 ,  H01L29/66553 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01L29/42392

Abstract: A method and apparatus for forming a semiconductor device are provided. The method includes thermally treating a substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate includes positioning the substrate in a processing volume of a first processing chamber, the substrate having one or more silicon nanosheets formed thereon. Thermally treating the substrate further includes heating the substrate to a first temperature of more than about 250 degrees Celsius, generating hydrogen radicals using a remote plasma source fluidly coupled with the processing volume, and maintaining the substrate at the first temperature while concurrently exposing the one or more silicon nanosheets to the generated hydrogen radicals. The generated hydrogen radicals remove residual germanium from the one or more silicon nanosheets.