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公开(公告)号：US20180073142A9
公开(公告)日：2018-03-15
申请号：US14552273
申请日：2014-11-24
Applicant: Applied Materials, Inc.
Inventor： Karthik Janakiraman , Thomas NOWAK , Juan Carlos ROCHA-ALVAREZ , Mark A. FODOR , Dale R. DU BOIS , Amit BANSAL , Mohamad AYOUB , Eller Y. JUCO , Visweswaren SIVARAMAKRISHNAN , Hichem M'SAAD
IPC: C23C16/455 , C23C16/458 , C23C16/44 , C23C16/503 , C23C16/505 , H01J37/32
CPC classification number: C23C16/45565 , C23C16/4412 , C23C16/458 , C23C16/4586 , C23C16/503 , C23C16/505 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J37/32541
Abstract: An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.
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公开(公告)号：US20160084400A1
公开(公告)日：2016-03-24
申请号：US14932384
申请日：2015-11-04
Applicant: Applied Materials, Inc.
Inventor： Ramprakash SANKARAKRISHNAN , Dale R. DU BOIS , Ganesh BALASUBRAMANIAN , Karthik JANAKIRAMAN , Juan Carlos ROCHA-ALVAREZ , Thomas NOWAK , Visweswaren SIVARAMAKRISHNAN , Hichem M'SAAD
CPC classification number: F16K31/0655 , B08B5/00 , B08B7/0021 , C23C16/4405 , C23C16/4409 , C23C16/45561 , F16K1/221 , F16K1/224 , F16K31/06 , F16K31/088 , Y10S438/905
Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.
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公开(公告)号：US20140076236A1
公开(公告)日：2014-03-20
申请号：US14087671
申请日：2013-11-22
Applicant: Applied Materials, Inc.
Inventor： Ramprakash SANKARAKRISHNAN , Dale R. DU BOIS , Ganesh BALASUBRAMANIAN , Karthik JANAKIRAMAN , Juan Carlos ROCHA-ALVAREZ , Thomas NOWAK , Visweswaren SIVARAMAKRISHNAN , Hichem M'SAAD
CPC classification number: F16K31/0655 , B08B5/00 , B08B7/0021 , C23C16/4405 , C23C16/4409 , C23C16/45561 , F16K1/221 , F16K1/224 , F16K31/06 , F16K31/088 , Y10S438/905
Abstract: A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.
Abstract translation: 提供了一种用于清洁处理室的方法和设备。 在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。 每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。 第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道 每个处理区域。
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