公开(公告)号：US20240412959A1

公开(公告)日：2024-12-12

申请号：US18208174

申请日：2023-06-09

Applicant: Applied Materials, Inc.

Inventor： David PETERSON ,  David COUMOU ,  Chuang-Chia LIN ,  Kelvin CHAN ,  Farzad HOUSHMAND ,  Ping-Hwa HSIEH ,  Kristopher FORD

IPC: H01J37/32

Abstract: Embodiments disclosed herein include a module, comprising: a substrate, wherein the substrate comprises a dielectric material, and a microstrip resonator on the substrate. In an embodiment, a microstrip transmission line is on the substrate adjacent to the microstrip resonator, and the microstrip resonator is spaced from the microstrip transmission line by a gap. In an embodiment, a ground plane on a surface of the substrate is opposite from the microstrip resonator.

公开(公告)号：US20240274407A1

公开(公告)日：2024-08-15

申请号：US18168168

申请日：2023-02-13

Applicant: Applied Materials, Inc.

Inventor： Peiqi WANG ,  Kelvin CHAN ,  Kai WU ,  Mingrui ZHAO ,  David PETERSON ,  Ping-Hwa HSIEH

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32449 ,  H01J37/32458 ,  H01J37/32743 ,  H01L21/02315

Abstract: Embodiments herein are generally directed to electronic device manufacturing and, more particularly, to systems and methods for forming substantially void-free and seam-free tungsten features in a semiconductor device manufacturing scheme. In one embodiment, a substrate processing system features a processing chamber and a gas delivery system fluidly coupled to the processing chamber. The gas delivery system includes a first radical generator for use in a differential inhibition treatment process where the differential inhibition treatment process includes exposing a substrate to the effluent of a treatment plasma from a halogen free nitrogen-containing gas and a halogen-containing gas.