公开(公告)号：US20180061867A1

公开(公告)日：2018-03-01

申请号：US15344045

申请日：2016-11-04

Applicant: Apple Inc.

Inventor： Chih Pang Chang ,  Jung-Fang Chang ,  ChinWei Hu ,  Te-Hua Teng ,  Jung Yen Huang ,  Wen-I Hsieh ,  Jiun-Jye Chang ,  Ching-Sang Chuang ,  Hung-Che Ting ,  Lungpao Hsin

IPC: H01L27/12

CPC classification number: H01L27/1251 ,  H01L27/1225

Abstract: Hybrid silicon TFT and oxide TFT structures and methods of formation are described. In an embodiment, a protection layer is formed over a semiconductor oxide channel layer of the oxide TFT to protect the semiconductor oxide channel layer during a cleaning operation of the silicon TFT.