公开(公告)号：US20040075835A1

公开(公告)日：2004-04-22

申请号：US10410557

申请日：2003-04-07

Applicant: AU Optronics Corp.

Inventor： Kun-Chih Lin ,  Long-Sheng Liao ,  Chen-Chou Hsu

IPC: G01J004/00

CPC classification number: G01N21/211 ,  G01N2021/213 ,  G01N2021/9513

Abstract: A method of inspecting the grain size of a polysilicon film. A substrate covered by an amorphous silicon layer is provided. Next, the amorphous silicon layer is annealed by a laser beam with a predetermined laser energy density to transfer it to a polysilicon layer. Thereafter, the polysilicon layer is measured by a spectrometer under a predetermined photon energy range to achieve an optical parameter. Finally, the optical parameter is quantized to achieve a determining index, thereby monitoring the grain size of the polysilicon layer.

Abstract translation: 检查多晶硅膜的晶粒尺寸的方法。 提供了由非晶硅层覆盖的衬底。 接下来，通过具有预定激光能量密度的激光束对非晶硅层进行退火，将其转移到多晶硅层。 此后，通过光谱仪在预定的光子能量范围内测量多晶硅层以实现光学参数。 最后，对光学参数进行量化以获得确定指标，从而监测多晶硅层的晶粒尺寸。