公开(公告)号：US11662666B2

公开(公告)日：2023-05-30

申请号：US17441353

申请日：2020-03-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Rowin Meijerink ,  Putra Saputra ,  Pieter Gerardus Jacobus Smorenberg ,  Theo Wilhelmus Maria Thijssen ,  Khalid Elbattay ,  Ma Su Su Hlaing ,  Paul Derwin ,  Bo Zhong ,  Masaya Komatsu

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70258 ,  G03F7/70725

Abstract: A method for controlling a lithographic apparatus configured to pattern an exposure field on a substrate including at least a sub-field, the method including: obtaining an initial spatial profile associated with a spatial variation of a performance parameter associated with a layer on the substrate across at least the sub-field of the exposure field; and decomposing the initial spatial profile into at least a first component spatial profile for controlling a lithographic apparatus at a first spatial scale and a second component spatial profile for controlling the lithographic apparatus at a second spatial scale associated with a size of the sub-field, wherein the decomposing includes co-optimizing the first and second component spatial profiles based on correcting the spatial variation of the performance parameter across the sub-field.

公开(公告)号：US11768441B2

公开(公告)日：2023-09-26

申请号：US17801381

申请日：2021-02-03

Applicant: ASML NETHERLANDS B.V.

Inventor： Peter Ten Berge ,  Steven Erik Steen ,  Pieter Gerardus Jacobus Smorenberg ,  Khalid Elbattay

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70525

Abstract: A method for controlling a process of manufacturing semiconductor devices, the method including: obtaining a first control grid associated with a first lithographic apparatus used for a first patterning process for patterning a first substrate; obtaining a second control grid associated with a second lithographic apparatus used for a second patterning process for patterning a second substrate; based on the first control grid and second control grid, determining a common control grid definition for a bonding step for bonding the first substrate and second substrate to obtain a bonded substrate; obtaining bonded substrate metrology data including data relating to metrology performed on the bonded substrate; and determining a correction for performance of the bonding step based on the bonded substrate metrology data, the determining a correction including determining a co-optimized correction for the bonding step and for the first patterning process and/or second patterning process.