公开(公告)号：US20190341264A1

公开(公告)日：2019-11-07

申请号：US16399478

申请日：2019-04-30

Applicant: APPLIED MATERIALS, INC.

Inventor： YUEH SHENG OW ,  JUNQI WEI ,  WEN LONG FAVIER SHOO ,  ANANTHKRISHNA JUPUDI ,  TAKASHI SHIMIZU ,  KELVIN BOH ,  TUCK FOONG KOH

IPC: H01L21/30 ,  H01L21/683 ,  H01L21/67

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：US20210233773A1

公开(公告)日：2021-07-29

申请号：US17227327

申请日：2021-04-11

Applicant: APPLIED MATERIALS, INC.

Inventor： YUEH SHENG OW ,  JUNQI WEI ,  WEN LONG FAVIER SHOO ,  ANANTHKRISHNA JUPUDI ,  TAKASHI SHIMIZU ,  KELVIN BOH ,  TUCK FOONG KOH

IPC: H01L21/30 ,  H01L21/683 ,  H01L21/67

Abstract: Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.