公开(公告)号：US20200185192A1

公开(公告)日：2020-06-11

申请号：US16791947

申请日：2020-02-14

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Hamid TAVASSOLI ,  Ajit BALAKRISHNA ,  Zhigang CHEN ,  Andrew NGUYEN ,  Douglas A. BUCHBERGER, JR. ,  Kartik RAMASWAMY ,  Shahid RAUF ,  Kenneth S. COLLINS

IPC: H01J37/32 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US20160314937A1

公开(公告)日：2016-10-27

申请号：US15198993

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Hamid TAVASSOLI ,  Ajit BALAKRISHNA ,  Zhigang CHEN ,  Andrew NGUYEN ,  Douglas A. BUCHBERGER, JR. ,  Kartik RAMASWAMY ,  Shahid RAUF ,  Kenneth S. COLLINS

IPC: H01J37/32

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US20160314936A1

公开(公告)日：2016-10-27

申请号：US15198969

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Hamid TAVASSOLI ,  Ajit BALAKRISHNA ,  Zhigang CHEN ,  Andrew NGUYEN ,  Douglas A. BUCHBERGER, JR. ,  Kartik RAMASWAMY ,  Shahid RAUF ,  Kenneth S. COLLINS

IPC: H01J37/32

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US20220254606A1

公开(公告)日：2022-08-11

申请号：US17728794

申请日：2022-04-25

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Hamid TAVASSOLI ,  Ajit BALAKRISHNA ,  Zhigang CHEN ,  Andrew NGUYEN ,  Douglas A. BUCHBERGER, JR. ,  Kartik RAMASWAMY ,  SHAHID RAUF ,  Kenneth S. COLLINS

IPC: H01J37/32 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US20180155838A1

公开(公告)日：2018-06-07

申请号：US15421964

申请日：2017-02-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Muhammad M. RASHEED ,  Muhannad MUSTAFA ,  Hamid TAVASSOLI ,  Steven V. SANSONI ,  Cheng-Hsiung TSAI ,  Vikash Banthia

IPC: C23C16/46 ,  H01L21/67 ,  H01L21/687 ,  H01L21/683

CPC classification number: C23C16/46 ,  C23C16/4584 ,  C23C16/4586 ,  H01L21/67103 ,  H01L21/67248 ,  H01L21/6831 ,  H01L21/68735 ,  H01L21/68742 ,  H01L21/68785

Abstract: Embodiments of the present disclosure are directed process kits for use with an in-chamber heater and substrate rotating mechanism. In some embodiments consistent with the present disclosure, a process kit for use with a rotatable substrate support heater pedestal for supporting a substrate in a process chamber may include an upper edge ring including a top ledge and a skirt the extends downward from the top ledge, a lower edge ring that at least partially supports the upper edge ring and aligns the upper edge ring with the substrate support heater pedestal, a bottom plate disposed on a bottom of the process chamber that supports the upper edge ring when the substrate support heater pedestal is in a lowered non-processing position, and a shadow ring that couples with the upper edge ring when the substrate support heater pedestal is in a raised processing position.

公开(公告)号：US20170271129A1

公开(公告)日：2017-09-21

申请号：US15611756

申请日：2017-06-01

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Hamid TAVASSOLI ,  Ajit BALAKRISHNA ,  Zhigang CHEN ,  Andrew NGUYEN ,  Douglas A. BUCHBERGER, JR. ,  Kartik RAMASWAMY ,  Shahid RAUF ,  Kenneth S. COLLINS

IPC: H01J37/32 ,  H05H1/46

CPC classification number: H01J37/3244 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01J37/32733 ,  H01J37/32743 ,  H01J37/32834 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3344 ,  H05H1/46

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US20160314942A1

公开(公告)日：2016-10-27

申请号：US15199068

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Hamid TAVASSOLI ,  Ajit BALAKRISHNA ,  Zhigang CHEN ,  Andrew NGUYEN ,  Douglas A. BUCHBERGER, JR. ,  Kartik RAMASWAMY ,  Shahid RAUF ,  Kenneth S. COLLINS

IPC: H01J37/32

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.

公开(公告)号：US20160314940A1

公开(公告)日：2016-10-27

申请号：US15199046

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Hamid TAVASSOLI ,  Ajit BALAKRISHNA ,  Zhigang CHEN ,  Andrew NGUYEN ,  Douglas A. BUCHBERGER, JR. ,  Kartik RAMASWAMY ,  Shahid RAUF ,  Kenneth S. COLLINS

IPC: H01J37/32

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.