公开(公告)号：US08754431B2

公开(公告)日：2014-06-17

申请号：US13412044

申请日：2012-03-05

Applicant: Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Kenji Nakamura ,  Shinji Nunotani ,  Takanobu Kamakura

Inventor： Akira Fujimoto ,  Tsutomu Nakanishi ,  Ryota Kitagawa ,  Kenji Nakamura ,  Shinji Nunotani ,  Takanobu Kamakura

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/30 ,  H01L33/10

CPC classification number: H01L33/30 ,  H01L33/10 ,  H01L33/38

Abstract: According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion.

Abstract translation: 根据一个实施例，半导体发光器件包括第一和第二电极层，第一和第二半导体层，发光层和第一中间层。 第一电极层具有具有通孔的金属部分。 第二电极层沿堆叠方向与第一电极层堆叠并且具有光反射性。 第一半导体层设置在第一和第二电极层之间，并且具有第一导电类型。 第二半导体层设置在第一半导体层和第二电极层之间，具有第二导电型。 发光层设置在第一和第二半导体层之间。 第一中间层设置在第二半导体层和第二电极层之间，对从发光层发射的光透射，并且包括第一接触部分和第一非接触部分。

公开(公告)号：US20130135746A1

公开(公告)日：2013-05-30

申请号：US13723374

申请日：2012-12-21

Applicant: Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa ,  Takeshi Okino

Inventor： Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa ,  Takeshi Okino

IPC: G02B1/11

CPC classification number: G02B1/118 ,  B81C1/0046 ,  C03C15/00 ,  C03C17/007 ,  C03C17/28 ,  C03C2217/42 ,  C03C2217/77 ,  C03C2218/34 ,  C03C2218/355 ,  Y10T428/24421

Abstract: The present invention provides such a formation method that an antireflection structure having excellent antireflection functions can be formed in a large area and at small cost. Further, the present invention also provides an antireflection structure formed by that method. In the formation method, a base layer and particles placed thereon are subjected to an etching process. The particles on the base layer serve as an etching mask in the process, and hence they are more durable against etching than the base layer. The etching rate ratio of the base layer to the particles is more than 1 but not more than 5. The etching process is stopped before the particles disappear. It is also possible to produce an antireflection structure by nanoimprinting method employing a stamper. The stamper is formed by use of a master plate produced according to the above formation method.

公开(公告)号：US08450768B2

公开(公告)日：2013-05-28

申请号：US13335984

申请日：2011-12-23

Applicant: Ryota Kitagawa ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

Inventor： Ryota Kitagawa ,  Koji Asakawa ,  Akira Fujimoto ,  Tsutomu Nakanishi ,  Eishi Tsutsumi

IPC: H01L33/00

CPC classification number: H01L33/38 ,  H01L2933/0091

Abstract: The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer.

Abstract translation: 本发明提供一种半导体发光元件，其包括欧姆接触性优异且能够从整个表面发光的电极部。 放置在光提取侧的电极层包括金属部分和多个开口。 金属部分是连续的，使得零件中的任何一个点位置连续地连接而不断裂，并且整个区域的95％或更多的金属部分在直线上不间断地继续直线而不断裂，直线距离不大于 从活性层发射的光的1/3。 平均开口直径为发射光波长的10nm至1/3。 电极层的厚度为10nm〜200nm，与半导体层良好的欧姆接触。

公开(公告)号：US20090224660A1

公开(公告)日：2009-09-10

申请号：US12346937

申请日：2008-12-31

Applicant: Tsutomu Nakanishi ,  Akira Fujimoto ,  Shigeru Matake ,  Koji Asakawa

Inventor： Tsutomu Nakanishi ,  Akira Fujimoto ,  Shigeru Matake ,  Koji Asakawa

IPC: H01J1/63 ,  G02B6/10

CPC classification number: H01L51/5262 ,  H01L51/5271 ,  H01L2251/5315

Abstract: The present invention provides a highly efficient light-extraction layer and an organic electroluminescence element excellent in light-extraction efficiency. The light-extraction layer of the present invention comprises a reflecting layer and a three-dimensional diffraction layer formed thereon. The diffraction layer comprises fine particles having a variation coefficient of the particle diameter of 10% or less and of a matrix having a refractive index different from that of the fine particles. The particles have a volume fraction of 50% or more based on the volume of the diffraction layer. The particles are arranged to form first areas having short-distance periodicity, and the first areas are disposed and adjacent to each other in random directions to form second areas. The organic electroluminescence element of the present invention comprises the above light-extraction layer.

Abstract translation: 本发明提供了光提取效率优异的高效率的光提取层和有机电致发光元件。 本发明的光提取层包括反射层和在其上形成的三维衍射层。 衍射层包括具有10％以下的粒径变化系数的微粒和具有与微粒的折射率不同的折射率的基质。 基于衍射层的体积，粒子的体积分数为50％以上。 颗粒被布置成形成具有短距离周期的第一区域，并且第一区域在随机方向上彼此设置和相邻，以形成第二区域。 本发明的有机电致发光元件包含上述光提取层。

公开(公告)号：US20090211783A1

公开(公告)日：2009-08-27

申请号：US12236132

申请日：2008-09-23

Applicant: Eishi Tsutsumi ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa

Inventor： Eishi Tsutsumi ,  Tsutomu Nakanishi ,  Akira Fujimoto ,  Koji Asakawa

IPC: H01B5/00 ,  H01J9/00

CPC classification number: H01B13/0036 ,  H01J1/02 ,  H01J9/02 ,  H01J17/04 ,  H01J63/02 ,  H01J2217/49207

Abstract: The present invention provides a light-transmitting metal electrode including a substrate and a metal electrode layer having plural openings. The metal electrode layer also has such a continuous metal part that any pair of point-positions in the part is continuously connected without breaks. The openings in the metal electrode layer are periodically arranged to form plural microdomains. The plural microdomains are so placed that the in-plane arranging directions thereof are oriented independently of each other. The thickness of the metal electrode layer is in the range of 10 to 200 nm.

Abstract translation: 本发明提供一种透光性金属电极，其具有基板和具有多个开口部的金属电极层。 金属电极层还具有这样的连续的金属部分，即零件中的任何一个点位置连续连接而不断裂。 周期性地布置金属电极层中的开口以形成多个微区域。 多个微区被放置成使得其面内排列方向彼此独立地取向。 金属电极层的厚度在10〜200nm的范围内。

公开(公告)号：US20080078678A1

公开(公告)日：2008-04-03

申请号：US11687709

申请日：2007-03-19

Applicant: Akira Fujimoto ,  Tsutomu Nakanishi

Inventor： Akira Fujimoto ,  Tsutomu Nakanishi

IPC: C25D5/00

CPC classification number: H05B33/10 ,  C03C17/38 ,  C03C2217/42 ,  C03C2217/445 ,  C03C2217/479 ,  C03C2217/48 ,  C03C2217/948 ,  H01L51/5268

Abstract: A method for arranging particles according to one aspect of the present invention comprises the steps of: forming a thin film on a surface of a substrate, the thin film being obtained by dispersing first particles made of metal in a material, a surface of the material is to be charged to a first polarity in a predetermined solution; dispersing second particles in the solution, the second particles being charged to a second polarity opposite to the first polarity; immersing the thin film in the solution; and irradiating the thin film with light having a wavelength which causes plasmon resonance with surface plasmons of the metal particles.

Abstract translation: 根据本发明的一个方面的用于排列颗粒的方法包括以下步骤：在基材的表面上形成薄膜，所述薄膜通过将金属制成的第一颗粒分散在材料中，所述材料的表面 在预定的解决方案中被充电到第一极性; 将第二颗粒分散在溶液中，将第二颗粒充电至与第一极性相反的第二极性; 将薄膜浸入溶液中; 并且用具有导致与金属颗粒的表面等离子体激元等离子体共振的波长的光照射该薄膜。

公开(公告)号：US20060192483A1

公开(公告)日：2006-08-31

申请号：US11319508

申请日：2005-12-29

Applicant: Tsutomu Nakanishi ,  Toshiro Hiraoka ,  Akira Fujimoto ,  Koji Asakawa ,  Satoshi Saito

Inventor： Tsutomu Nakanishi ,  Toshiro Hiraoka ,  Akira Fujimoto ,  Koji Asakawa ,  Satoshi Saito

IPC: H05B33/00

CPC classification number: H01L51/5275

Abstract: An organic electroluminescent device is provided, which includes an emission portion comprising a first electrode and a second electrode and an organic layer sandwiched between the first and second electrodes, and a diffraction grating disposed neighboring on the emission portion, the diffraction grating having first regions and a second region, the first regions comprising a plurality of pair of recessed and projected portions, the plurality of pair of recessed and projected portions being periodically arranged and provided with a primitive translation vector of a direction, the second region comprising an aggregate of the first regions and located parallel with an emission surface of the organic electroluminescent device.

Abstract translation: 提供一种有机电致发光器件，其包括发射部分，其包括第一电极和第二电极以及夹在第一和第二电极之间的有机层，以及围绕发射部分设置的衍射光栅，衍射光栅具有第一区域和 第二区域，所述第一区域包括多个凹入和突出部分，所述多个凹入和突出部分周期性地布置并且设置有方向的原始平移向量，所述第二区域包括所述第一区域的聚集体 区域并且与有机电致发光器件的发射表面平行。

公开(公告)号：US6097080A

公开(公告)日：2000-08-01

申请号：US171455

申请日：1998-10-19

Applicant: Tsutomu Nakanishi ,  Akira Okamoto

Inventor： Tsutomu Nakanishi ,  Akira Okamoto

IPC: H01L23/31 ,  H01L23/552 ,  H01L23/58 ,  H01L23/64 ,  H05K1/00

CPC classification number: H01L24/48 ,  H01L23/3135 ,  H01L23/552 ,  H01L23/585 ,  H01L23/645 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/49175 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01056 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/3025

Abstract: It is the object to minimize a magnetic influence, on the outside, of a semiconductor chip which is formed on a substrate includes inductor conductors. A semiconductor chip 2 including inductor conductors is mounted on a substrate 1 and a plurality of through holes 8 are formed in the area on the outside of the mounting position. Shielding members 4 are formed on the chip mounting side and the opposite side of the substrate 1 and in the through holes 8 so as to cover the semiconductor chip 2 with the shielding members 4 from both sides of the substrate 1. Therefore, magnetic fluxes from a circuit formed on the semiconductor chip 2 do not leak out from the shielding members 4, but circulate inside the shielding members 4.

Abstract translation: PCT No.PCT / JP97 / 01412 Sec。 371日期：1998年10月19日 102（e）1998年10月19日PCT PCT 1997年4月23日提交PCT公布。 出版物WO97 / 40654 日期为1997年10月30日的目的在于使形成在基板上的半导体芯片的外部的磁性影响最小化的目的包括电感器导体。 包括电感器导体的半导体芯片2安装在基板1上，并且在安装位置的外侧的区域中形成有多个通孔8。 屏蔽部件4形成在芯片安装侧和基板1的相反侧以及通孔8中，从而从基板1的两侧将屏蔽部件4覆盖半导体芯片2。因此，从 形成在半导体芯片2上的电路不会从屏蔽部件4泄漏，而是在屏蔽部件4的内部循环。

公开(公告)号：US5523572A

公开(公告)日：1996-06-04

申请号：US410760

申请日：1995-03-27

Applicant: Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

Inventor： Tsutomu Nakanishi ,  Hiromichi Horinaka ,  Takashi Saka ,  Toshihiro Kato

IPC: H01J1/34 ,  H01J3/02 ,  H01J37/00

CPC classification number: H01J1/34 ,  H01J3/021 ,  H01J2201/3423 ,  H01J2203/0296

Abstract: A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

Abstract translation: 一种生产高自旋极化电子束的方法，包括以下步骤：向包括具有第一晶格常数的第一化合物半导体层和具有不同于第一晶格常数的第二晶格常数的第二化合物半导体层的半导体器件施加光能 晶格常数，所述第二半导体层与所述第一半导体层接触接触以提供应变的半导体异质结构，所述第一和第二晶格常数之间的失配量的大小限定了所述第一和第二晶格常数之间的重孔带和所述光孔带之间的能量分裂 第二半导体层，使得能量分裂大于使用中的第二半导体层中的热噪声能量; 以及在接收到光能时从第二半导体层提取高自旋极化的电子束。 一种半导体器件，用于在接收到光能时发射包括由砷化镓磷化物GaAs1-xPx形成的并具有第一晶格常数的第一化合物半导体层的高度自旋极化的电子束; 以及设置在所述第一半导体层上的第二化合物半导体层，所述第二半导体层具有与所述第一晶格常数不同的第二晶格常数和小于所述第一半导体层的厚度的厚度t。

公开(公告)号：US4934843A

公开(公告)日：1990-06-19

申请号：US377727

申请日：1989-07-10

Applicant: Tsutomu Nakanishi

Inventor： Tsutomu Nakanishi

IPC: F16C13/02 ,  F16C13/00 ,  F16C19/14 ,  F16C19/16 ,  F16C19/54 ,  F16C25/08 ,  F16C33/58

CPC classification number: F16C19/16 ,  F16C19/54 ,  F16C25/08 ,  F16C33/581

Abstract: This invention relates to a rotary structure adapted to be used for a spindle unit of a miniature motor or miniature rotor or for a tape guide roller of a VTR or the like. In the structure of the rotary mechanism, instead of the conventional expensive radial ball bearings, recessed step parts are formed in the shaft itself and balls are held by and between the recessed step parts and ball receiving surfaces formed as tapered surfaces surfaces on outer races provided around the periphery of the shaft.

Abstract translation: 本发明涉及适用于微型电动机或微型转子的主轴单元或VTR等的带导向辊的旋转结构。 在旋转机构的结构中，代替常规的昂贵的径向球轴承，在轴本身中形成凹入的阶梯部，并且球被保持在凹入的台阶部分和在外圈上形成为锥形表面的球接收表面之间， 围绕轴的周边。