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公开(公告)号：US20130115762A1
公开(公告)日：2013-05-09
申请号：US13810622
申请日：2011-07-01
IPC分类号： H01L21/324
CPC分类号： H01L21/324 , C30B11/04 , C30B15/04 , Y10T117/10 , Y10T117/1024 , Y10T117/1032
摘要： A feedstock of semiconductor material is placed in a crucible. A closed sacrificial recipient containing a dopant material is placed in the crucible. The content of the crucible is melted resulting in incorporation of the dopant in the molten material bath. The temperature increase is performed under a reduced pressure.
摘要翻译： 将半导体材料的原料放置在坩埚中。 将包含掺杂剂材料的封闭的牺牲接收器放置在坩埚中。 坩埚的内容物熔化，导致掺杂剂掺入熔融物料浴中。 在减压下进行升温。
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公开(公告)号：US08900981B2
公开(公告)日：2014-12-02
申请号：US13810622
申请日：2011-07-01
IPC分类号： H01L21/04 , H01L21/324 , C30B11/04 , C30B15/04
CPC分类号： H01L21/324 , C30B11/04 , C30B15/04 , Y10T117/10 , Y10T117/1024 , Y10T117/1032
摘要： A feedstock of semiconductor material is placed in a crucible. A closed sacrificial recipient containing a dopant material is placed in the crucible. The content of the crucible is melted resulting in incorporation of the dopant in the molten material bath. The temperature increase is performed under a reduced pressure.
摘要翻译： 将半导体材料的原料放置在坩埚中。 将包含掺杂剂材料的封闭的牺牲接收器放置在坩埚中。 坩埚的内容物熔化，导致掺杂剂掺入熔融物料浴中。 在减压下进行升温。
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公开(公告)号：US20080123715A1
公开(公告)日：2008-05-29
申请号：US11628766
申请日：2005-06-07
申请人： Christian Trassy , Yves Delannoy , Erwann Fourmond , Cyrille Ndzogha , Gerard Baluais , Yves Caratini
发明人： Christian Trassy , Yves Delannoy , Erwann Fourmond , Cyrille Ndzogha , Gerard Baluais , Yves Caratini
IPC分类号： C01B33/037
CPC分类号： C01B33/037
摘要： The present invention relates to a silicon refining installation, having a cold sectorized induction crucible, having its internal wall lined with a refractory material.
摘要翻译： 本发明涉及一种硅精炼装置，其具有冷扇形诱导坩埚，其内壁衬有耐火材料。
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