Reissue Patent
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US13569604Application Date: 2012-08-08
-
Publication No.: USRE45462E1Publication Date: 2015-04-14
- Inventor: Shinji Mori , Tsutomu Sato , Koji Matsuo
- Applicant: Shinji Mori , Tsutomu Sato , Koji Matsuo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, LLP
- Priority: JP2007-088836 20070329
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/772
Abstract:
A semiconductor device includes a first pMISFET region having an Si channel, a second pMISFET region having an Si channel and an nMISFET region having an Si channel. First SiGe layers which apply first compression strain to the Si channel are embedded and formed in the first pMISFET region to sandwich the Si channel thereof and second SiGe layers which apply second compression strain different from the first compression strain to the Si channel are embedded and formed in the second pMISFET region to sandwich the Si channel thereof.
Information query
IPC分类:
