Invention Grant
- Patent Title: Semiconductor devices for sensing voltages
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Application No.: US15720318Application Date: 2017-09-29
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Publication No.: US09964975B1Publication Date: 2018-05-08
- Inventor: Pedro Barbosa Zanetta , Andre Luis Vilas Boas
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: G05F1/56
- IPC: G05F1/56 ; H02M3/07 ; G05F1/569 ; G05F1/46 ; G05F1/565 ; G01R19/00 ; G05F3/16

Abstract:
A circuit includes a first resistive element having a first terminal coupled to an input node to receive a negative voltage, a second resistive element having a first terminal coupled to a first power supply terminal, and a third resistive element having a first terminal coupled to the first power supply terminal. A first current mirror includes a first transistor coupled to a second terminal of the second resistive element and a second transistor coupled to a second terminal of the third resistive element and the first transistor, wherein the output node corresponds to the second terminal of the third resistive element. A second current mirror includes a third transistor coupled to the first transistor and a fourth transistor coupled to the second transistor, third transistor, and a second terminal of the first resistive element. The circuit converts the negative voltage to the positive proportion voltage.
Information query
IPC分类: