Invention Grant
- Patent Title: Thin-film transistor
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Application No.: US14416767Application Date: 2014-12-22
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Publication No.: US09960283B2Publication Date: 2018-05-01
- Inventor: Longqiang Shi , Zhiyuan Zeng , Hejing Zhang , Yutong Hu
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd
- Current Assignee Address: CN Shenzhen, Guangdong
- Agent Andrew C. Cheng
- Priority: CN201410748282 20141209
- International Application: PCT/CN2014/094555 WO 20141222
- International Announcement: WO2016/090674 WO 20160616
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L29/786 ; H01L29/417

Abstract:
Disclosed is a thin-film transistor. The thin-film transistor includes: a substrate; a first gate, a first gate insulation layer, a semiconductor layer, an etching stop layer, and the second gate stacked on a surface of the substrate, in which the semiconductor layer has a thickness of 200 nm-2000 nm; the etching stop layer includes a first via and a second via formed therein; and the first via and the second via are arranged to each correspond to the semiconductor layer; and a source and a drain respectively extending through the first via and the second via to connect to the semiconductor layer. The thin-film transistor has an increased ON-state current and switching speed.
Public/Granted literature
- US20160163881A1 THIN-FILM TRANSISTOR Public/Granted day:2016-06-09
Information query
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