Disclosed is a thin-film transistor. The thin-film transistor includes: a substrate; a first gate, a first gate insulation layer, a semiconductor layer, an etching stop layer, and the second gate stacked on a surface of the substrate, in which the semiconductor layer has a thickness of 200 nm-2000 nm; the etching stop layer includes a first via and a second via formed therein; and the first via and the second via are arranged to each correspond to the semiconductor layer; and a source and a drain respectively extending through the first via and the second via to connect to the semiconductor layer. The thin-film transistor has an increased ON-state current and switching speed.