A gate drive circuit includes first and second transistors for turning on and off semiconductor switching devices. The circuit includes a DC power supply for driving the first and second transistors. The gate drive circuit further includes a third transistor, a fourth transistor, and a DC power supply being a power supply for the third and fourth transistors with a voltage value lower than the voltage value of the DC power supply, thereby making lower the impedance of the path of a current flowing from the DC power supply to the gates of the switching devices through the third transistor than the impedance of the path of a current flowing from the DC power supply to the gates of the switching devices through the first transistor.