- 专利标题： III-V fin on insulator
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申请号： US15292983申请日： 2016-10-13
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公开(公告)号： US09954106B2公开(公告)日： 2018-04-24
- 发明人: Kangguo Cheng , Hemanth Jagannathan , Alexander Reznicek
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Daniel P. Morris, Esq.
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/78 ; H01L29/66 ; H01L29/201 ; H01L29/06 ; H01L27/088 ; H01L29/205 ; H01L21/306 ; H01L21/308
摘要：
A method of forming a semiconductor structure in which a III-V compound semiconductor channel fin portion is formed on a dielectric material is provided. The method includes forming a III-V material stack on a surface of a bulk semiconductor substrate. Patterning of the III-V material stack is then employed to provide a pre-fin structure that is located between, and in contact with, pre-pad structures. The pre-pad structures are used as an anchoring agent when a III-V compound semiconductor channel layer portion of the III-V material stack and of the pre-fin structure is suspended by removing a topmost III-V compound semiconductor buffer layer portion of the material stack from the pre-fin structure. A dielectric material is then formed within the gap provided by the suspending step and thereafter a fin cut process is employed.
公开/授权文献
- US20170084732A1 III-V FIN ON INSULATOR 公开/授权日：2017-03-23
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