A semiconductor device is manufactured by: i) forming a mask on a process surface of a semiconductor layer, elongated openings of the mask exposing part of the semiconductor layer and extending along a first lateral direction; ii) implanting dopants of a first conductivity type into the semiconductor layer based on tilt angle α1 between an ion beam direction and a process surface normal and based on twist angle ω1 between the first lateral direction and a projection of the ion beam direction on the process surface; iii) implanting dopants of a second conductivity type into the semiconductor layer based on tilt angle α2 between an ion beam direction and the process surface normal and based on twist angle ω2 between the first lateral direction and a projection of the ion beam direction on the process surface; and repeating i) to iii) at least one time.