- 专利标题： Semiconductor structures having increased channel strain using fin release in gate regions
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申请号： US14830789申请日： 2015-08-20
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公开(公告)号： US09954083B2公开(公告)日： 2018-04-24
- 发明人: Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Darsen D. Lu , Alexander Reznicek , Kern Rim
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L27/092
- IPC分类号： H01L27/092 ; H01L21/8234 ; H01L29/66 ; H01L29/165 ; H01L21/8238 ; H01L21/84 ; H01L29/78 ; H01L21/02 ; H01L21/033 ; H01L21/32 ; H01L21/324 ; H01L29/10 ; H01L29/161
摘要：
A method of introducing strain in a channel region of a FinFET device includes forming a fin structure on a substrate, the fin structure having a lower portion comprising a sacrificial layer and an upper portion comprising a strained semiconductor layer; and removing a portion of the sacrificial layer corresponding to a channel region of the FinFET device so as to release the upper portion of the fin structure from the substrate in the channel region.
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