- 专利标题： Semiconductor device structure useful for bulk transistor and method of manufacturing same where a substrate extends commonly over a transistor, an element region, and a separation region
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申请号： US15186765申请日： 2016-06-20
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公开(公告)号： US09954031B2公开(公告)日： 2018-04-24
- 发明人: Takashi Yokoyama , Taku Umebayashi
- 申请人： Sony Corporation
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Dentons US LLP
- 优先权： JP2013-181338 20130902
- 主分类号： H01L27/22
- IPC分类号： H01L27/22 ; H01L23/48 ; H01L29/78 ; H01L21/768 ; H01L27/06 ; H01L21/84 ; H01L27/12 ; H01L43/02 ; H01L43/08 ; H01L43/10 ; H01L43/12
摘要：
A semiconductor device including a semiconductor substrate with a first surface and a second surface facing each other, the semiconductor substrate having an element region in which a transistor is provided on the first surface, and a separation region in which an element separating layer surrounding the element region is provided; a contact plug extending from the first surface to the second surface, in the element region of the semiconductor substrate; and an insulating film covering a periphery of the contact plug.
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