- 专利标题： Semiconductor device comprising oxide semiconductor layer
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申请号： US14883706申请日： 2015-10-15
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公开(公告)号： US09954005B2公开(公告)日： 2018-04-24
- 发明人: Hajime Kimura , Hiroki Ohara , Masayo Kayama
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Fish & Richardson P.C.
- 优先权： JP2009-184323 20090807
- 主分类号： H01L27/00
- IPC分类号： H01L27/00 ; H01L29/00 ; H01L27/12 ; H01L29/45 ; H01L29/49 ; H01L29/786 ; H01L29/66
摘要：
A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first thin film transistor and the second thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. Each of the layers of the first thin film transistor has a light-transmitting property. Materials of the gate electrode layer, the source electrode layer and the drain electrode layer of the first thin film transistor are different from those of the second transistor, and each of the resistances of the second thin film transistor is lower than that of the first thin film transistor.
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