- 专利标题： Method of forming a semiconductor device
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申请号： US15016079申请日： 2016-02-04
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公开(公告)号： US09953878B2公开(公告)日： 2018-04-24
- 发明人: Yu-Lien Huang , Tung Ying Lee , Pei-Yi Lin , Chun-Hsiang Fan , Sheng-Wen Yu , Neng-Kuo Chen , Ming-Huan Tsai
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人： Taiwan Semiconductor Manufacturing Company
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/8234 ; H01L21/762 ; H01L21/3105 ; H01L21/324 ; H01L27/088 ; H01L29/40
摘要：
A method of forming a semiconductor device is provided. The method includes forming a recess in a substrate and forming a first dielectric layer in the recess. A portion of the first dielectric layer is removed. A second dielectric layer is formed over the first dielectric layer. A gate structure is formed over the second dielectric layer.
公开/授权文献
- US20160155671A1 Method of Forming a Semiconductor Device 公开/授权日：2016-06-02
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