- 专利标题： Methods of forming a portion of a memory array having a conductor having a variable concentration of germanium
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申请号： US15606080申请日： 2017-05-26
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公开(公告)号： US09953842B2公开(公告)日： 2018-04-24
- 发明人: Randy J. Koval
- 申请人： MICRON TECHNOLOGY, INC.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： H01L27/11517
- IPC分类号： H01L27/11517 ; H01L21/3213 ; H01L27/11556 ; H01L21/3205 ; H01L21/28 ; H01L27/11582
摘要：
An embodiment of a method of forming a portion of a memory array includes forming a conductor with a concentration of germanium that decreases with an increasing thickness of the conductor, removing a portion of the conductor at a rate governed by the concentration of germanium to form a tapered first opening through the conductor, removing a sacrificial material below the conductor to form a second opening contiguous with the tapered first opening, and forming a semiconductor in the contiguous first and second openings, wherein a portion of the semiconductor pinches off within the first opening adjacent an upper surface of the conductor before the contiguous first and second openings are completely filled with the semiconductor.
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